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For integer Found Datasheets File :: 3378 Search Time::1.328ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S56163LC K4S56163LC-RF
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. Minimum tRDL=2CLK and tDAL(=tRDL + tRP) are required to complete both of last data wite command(tRDL) and precharge command(tRP). tRDL=1CLK can be s...
Description	16Mx16 Mobile SDRAM 54CSP CAP 680UF 50V ELECT FM RADIAL
File Size	59.21K / 8 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP). 4. All parts allo...
Description	16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
File Size	112.21K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 7 September 2004...
Description	16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
File Size	111.59K / 12 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MC1121DMR2 MC1121 ON0816
OCR Text	...e output voltage (where n is an integer representing the number of devices cascaded) is defined by VOUT = - n (VIN). http://onsemi.com 3 MC1121 MC1121 "1" 1 2 + C1 3 4 GND CAP- SHDN 6 SHDN* C1n FC CAP+ Vin+ FC CAP+ GND CAP- MC1121 "...
Description	100mA Charge Pump Voltage Converter with Shutdown SWITCHED CAPACITOR CONVERTER, 200 kHz SWITCHING FREQ-MAX, PDSO5 PRELIMINARY INFORMATION From old datasheet system
File Size	102.58K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	SAA7391 SAA7391H
OCR Text	...ters as external byte or 16-bit integer quantities. The block addressing of the SAA7391 facilitates the use of pairs of 16-bit quantities to represent addresses. 1997 Aug 01 3 Philips Semiconductors Objective specification AT...
Description	ATAPI CD-R block encoder/decoder
File Size	351.82K / 108 Page	View it Online	Download Datasheet

				MICROCHIP[Microchip Technology]
Part No.	TC1121EOA TC1121EPA TC1121EUA TC1121COA TC1121 TC1121CPA TC1121CUA TC1121COA713 TC1121CUA713 TC1121EOA713 TC1121EUA713
OCR Text	...e output voltage (where n is an integer representing the number of devices cascaded) is defined by VOUT = -n (VIN). To reduce output resistance, multiple TC1121s may be paralleled (see Figure 3-3). Each device needs a pump capacitor C1, but...
Description	The TC1121 is a charge pump converter with 100mA output current capability. It converts a 2.4V to 5.5V input to a corresponding negative ... The TC1121 is a charge pump converter with 100mA output current capability. It converts a 2.4V to 5.5V input to a corresponding negative output voltage. As with all charge pump converters, the TC1121 uses no inductors saving cost, size, an 100mA Charge Pump Voltage Converter with Shutdown
File Size	439.64K / 14 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HSP9501 HSP9501JC-25 HSP9501JC-2596 HSP9501JC-32 FN2786
OCR Text	...nputs and the DO0-9 outputs. An integer value between 0 and 1279 is placed on the LC0-10 inputs, and the total delay length (N) programmed is the LC0-10 value plus 2. In order to properly load an active length control word, the value must b...
Description	Programmable Data Buffer 10-BIT, DSP-PIPELINE REGISTER, PQCC44 From old datasheet system
File Size	48.65K / 8 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. Rev. 0.0 May 1999 ...
Description	2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
File Size	116.15K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48S8030 KM48S8030C KM48S8030CT-G_FA KM48S8030CT-G/FA
OCR Text	...rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. REV. 0 Oct. '98 ...
Description	2M x 8Bit x 4 Banks Synchronous DRAM 200万8位4银行同步DRAM
File Size	81.46K / 8 Page	View it Online	Download Datasheet

For integer Found Datasheets File :: 3378 Search Time::1.328ms
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