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SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
NXP Semiconductors N.V.
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| Part No. |
BSS192 Q62702-S634
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| OCR Text |
... C
DC drain current, pulsed
idpuls
-0.6
TA = 25 C
Power dissipation
Ptot
1
W
TA = 25 C
Semiconductor Group
1
18/02/1997
BSS 192
Maximum Ratings Parameter Chip or operating temperature Storage temperature Th... |
| Description |
SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) 150 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
74.07K /
7 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BUZ93 C67078-S1343-A2
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| OCR Text |
... Symbol Values 3.6 Unit A
ID idpuls
14.5
TC = 25 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
3.3 6 mJ
ID = 3.... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
From old datasheet system
SIPMOS ? Power Transistor
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| File Size |
177.64K /
9 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ355 C67078-S3107-A2
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| OCR Text |
...nt Symbol Values 6 Unit A
ID idpuls
24
TC = 29 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
5.1 15 mJ
ID = 6 A... |
| Description |
SIPMOS ? Power Transistor
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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| File Size |
208.54K /
9 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
BSM191 C67076-A1009-A2
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| OCR Text |
...arge VGS = f (QGate) parameter: idpuls = 42 A
Semiconductor Group
77
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| Description |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT08; No. of Contacts:15; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Right Angle Plug
SIMOPAC ? Module
From old datasheet system
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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| File Size |
222.16K /
7 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
BSM224A
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| OCR Text |
...arge VGS = f (QGate) parameter: idpuls = 121 A
Semiconductor Group
105
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| Description |
SIMOPAC ? Module
From old datasheet system
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| File Size |
232.25K /
7 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
BSP123 Q67000-S306
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| OCR Text |
... C
DC drain current, pulsed
idpuls
0.68
TA = 25 C
Power dissipation
Ptot
1.7
W
TA = 25 C
Semiconductor Group
1
Sep-12-1996
BSP 123
Maximum Ratings Parameter Chip or operating temperature Storage temperature... |
| Description |
SIPMOS ? Small-Signal Transistor
From old datasheet system
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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| File Size |
159.44K /
9 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ41A C67078-S1306-A3 BUZ41AC67078-A1306A3
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| OCR Text |
... Symbol Values 4.5 Unit A
ID idpuls
18
TC = 36 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
4.5 8 mJ
ID = 4.5 ... |
| Description |
320 output dot-matrix display driver
SIPMOS ? Power Transistor
From old datasheet system
SIPMOS POWER TRANSISTOR (N CHANNEL ENHANCEMENT MODE AVALANCHE-RATED)
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| File Size |
177.35K /
9 Page |
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it Online |
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Infineon
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| Part No. |
SPD07N20 SPU07N20
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| OCR Text |
...sed drain current
TC = 25 C
idpuls
28
EAS
Avalanche energy, single pulse
ID = 7 A, VDD = 50 V, RGS = 25 L = 4.9 mH, Tj = 25 C
mJ
120
VGS Ptot
Gate source voltage Power dissipation
TC = 25 C
20
40
V W
Opera... |
| Description |
SIPMOS ? Power Transistor
From old datasheet system
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| File Size |
215.31K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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