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  full shielded structure Datasheet PDF File

For full shielded structure Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    LDM-0808-300M-91

Roithner LaserTechnik GmbH
Part No. LDM-0808-300M-91
Description CW Output Power: 300mW Typical 808 nm Emission Wavelength High-deeiciency Quantum Well structure TO5 Package

File Size 177.45K  /  3 Page

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    LDM-0980-300M-92

Roithner LaserTechnik GmbH
Part No. LDM-0980-300M-92
Description CW Output Power: 300 mW Typical 975 nm Emission Wavelength High-effciency Quantum Well structure TO5 Package

File Size 170.99K  /  3 Page

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    Vishay Intertechnology, Inc.
Global Mixed-mode Technology, Inc.
Vicor, Corp.
Part No. V375B3.3M150A3L V375A3.3M150A3L V375B3.3M150A2L V375C3.3M150A V375A3.3M150AL V375A3.3M150A2L V375C3.3M150A3 V375B3.3M150AL V375C3.3M150A2 V375B48M300A3 V375B48H300A3L V375B48C300A3L V375B48T300A3L V375A3.3C150A3 V375A3.3C150A3L V375A3.3H150A3 V375A3.3C150A2L V375A3.3T150A2L V375A3.3H150A2L V375A3.3H150A3L V375A3.3H150AL V375A3.3T150A3L V375A24C300AL V375B3.3T150A3 V375B3.3T150AL V375B3.3T150A3L V375B3.3T150A2L V375C3.3T150A V375A12M300AL V375B2H100A3 V375B2H100A2 V375B2H100A2L V375A12C300A2L V375A12C300A3 V375C15C300AL V375C15C300A2 V375B3.3C150A3
Description DR331-7 Series shielded SMD Inductor; shielded Surface Mount Design. Inductance 150µH. Rated Current 0.26 Amps. Operating Temp. -40°C to 85°C. Size: 6.60mm x 4.45mm x 2.92mm.
Analog IC 模拟IC

File Size 177.55K  /  8 Page

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    SPD42R-473M SPD42R-332M SPD42R-472M SPD42R-682M SPD42R-823M SPD42R-123M SPD42R-103M SPD42R-104M SPD42R-122M SPD42R-153M

API Delevan
NXP Semiconductors N.V.
Part No. SPD42R-473M SPD42R-332M SPD42R-472M SPD42R-682M SPD42R-823M SPD42R-123M SPD42R-103M SPD42R-104M SPD42R-122M SPD42R-153M SPD42R-183M SPD42R-222M SPD42R-223M SPD42R-273M SPD42R-333M SPD42R-393M SPD42R-563M SPD42R-683M
Description INDUCTOR PWR shielded 47UH SMD 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR PWR shielded 3.3UH SMD 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR PWR shielded 4.7UH SMD 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR PWR shielded 6.8UH SMD 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR PWR shielded 82UH SMD 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR PWR shielded 12UH SMD 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR PWR shielded 10UH SMD 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
shielded Surface Mount Inductors

File Size 1,287.21K  /  1 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HIP4080A04 HIP4080AIBZ HIP4080AIPZ HIP4080AIP HIP4080A HIP4080AIB HIP4080AIBZT
Description 80V/2.5A Peak, High Frequency full Bridge FET Driver 1.4 A full BRDG BASED MOSFET DRIVER, PDIP20
80V/2.5A Peak, High Frequency full Bridge FET Driver 1.4 A full BRDG BASED MOSFET DRIVER, PDSO20
80V/2.5A Peak, High Frequency full Bridge FET Driver with Charge Pump and Input Comparators; Temperature Range: -40&deg;C to 85&deg;C; Package: 20-SOIC T&amp;R 1.4 A full BRDG BASED MOSFET DRIVER, PDSO20
Driver, full Bridge FET, Complementry N-Channel Outputs

File Size 714.68K  /  17 Page

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    BOURNS INC
Part No. U2009-150Y U2009-220Y U2009-3R3Y U2009-4R4Y
Description CHOKE, POWER, shielded, 15UH; Inductor type:shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:1370mR; Frequency, resonant:40MHz; Case style:SMD shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, shielded, 22UH; Inductor type:shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:2600mR; Frequency, resonant:30MHz; Case style:SMD shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, shielded, 3.3UH; Inductor type:shielded Power Choke; Inductance:3.3uH; Tolerance, inductance: /-30%; Resistance:320mR; Frequency, resonant:100MHz; Case style:SMD shielded; Q factor:7; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, shielded, 4.4UH; Inductor type:shielded Power Choke; Inductance:4.4uH; Tolerance, inductance: /-30%; Resistance:430mR; Frequency, resonant:85MHz; Case style:SMD shielded; Q factor:7; Material, core:Ferrite DR/RI; RoHS Compliant: Yes

File Size 243.66K  /  2 Page

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    APG2C1-365-E

Roithner LaserTechnik GmbH
Part No. APG2C1-365-E
Description structure: inGaN Peak Wavelength: 365nm Optical Output Power: typ. 135mW Life Time: 10.000 hours

File Size 313.52K  /  4 Page

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    APG2C1-375-E

Roithner LaserTechnik GmbH
Part No. APG2C1-375-E
Description structure: InGaN Peak Wavelength: 375 nm Optical Output Power: typ. 200 mW Life Time: > 10.000 hours

File Size 309.88K  /  4 Page

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    APG2C1-410

Roithner LaserTechnik GmbH
Part No. APG2C1-410
Description structure: InGaN Peak Wavelength: 410 nm Optical Output Power: typ. 125 mW Life Time: > 10.000 hours

File Size 336.28K  /  4 Page

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    PN5120A0ET PN5120A0HN PN5120A0HN1 PN512AA0HN1

NXP Semiconductors
Part No. PN5120A0ET PN5120A0HN PN5120A0HN1 PN512AA0HN1
Description full NFC forum compliant solution (TFBGA64)
full NFC forum compliant solution, 8-bit parallel interface (HVQFN40)
full NFC forum compliant solution (HVQFN32)
full NFC forum compliant solution (AEC-Q100)

File Size 1,247.25K  /  136 Page

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