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IMP[IMP, Inc]
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| Part No. |
C3017
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| OCR Text |
...4m Per side
Diffusion & Thin films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Interpoly Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res.... |
| Description |
10 Volt Analog Mixed Mode
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| File Size |
29.16K /
2 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C3015
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| OCR Text |
...3m Per side
Diffusion & Thin films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Gate Poly Sheet Resistance Metal-1 Sheet Resistance Passivation Thickness
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| Description |
CMOS 3um Digital
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| File Size |
31.91K /
2 Page |
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it Online |
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IMP[IMP, Inc]
IMP Inc
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| Part No. |
C1227
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| OCR Text |
...aracteristics
Diffusion & Thin films Symbol Starting Material p<100> N-well(f) Well(field)Sheet Resistance N+ N+ Sheet Resistance N+ Junction Depth xjN+ P+ P+ Sheet Resistance P+ Junction Depth xjP+ Base Resistance RSHB_RB High-Voltage Gat... |
| Description |
ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles 30V的高压BiCMOS工艺1.2毫米双金双聚
From old datasheet system
HV BiCMOS 1.2mm 30V Double Metal - Double Poly
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| File Size |
26.81K /
2 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C1226
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| OCR Text |
...aracteristics
Diffusion & Thin films Symbol Starting Material p<100> Well (field) Sheet Resistance N-well(f) N+ N+ Sheet Resistance N+ Junction Depth xjN+ P+ P+ Sheet Resistance P+ Junction Depth xjP+ High-Voltage Gate Oxide Th HTGOX Gate ... |
| Description |
CMOS 1.2um 100V CMOS, Double Metal - Double Poly
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| File Size |
39.21K /
2 Page |
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it Online |
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AVX, Corp.
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| Part No. |
CB017D0102JBA CB017D0103JBA CB017D0222JBA CB017D0472JBA CB017D0102J-- CB017D0102KBA CB017D0103J-- CB017D0103KBA CB017D0152JBA CB017D0103K-- CB037D0104JBA
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| OCR Text |
... of high temperature dielectric films make these capacitors suitable for ir or vapor phase reflow processes. this chip is built without specific encapsulation. ? the intrinsic elasticity of the dielectric film allows an excellent compatibi... |
| Description |
CAPACITOR, METALLIZED FILM, POLYETHYLENE NAPHTHALATE, 50 V, 0.001 uF, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
CAPACITOR, METALLIZED FILM, POLYETHYLENE NAPHTHALATE, 50 V, 0.01 uF, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
CAPACITOR, METALLIZED FILM, POLYETHYLENE NAPHTHALATE, 50 V, 0.0022 uF, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
CAPACITOR, METALLIZED FILM, POLYETHYLENE NAPHTHALATE, 50 V, 0.0047 uF, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
CAPACITOR, METALLIZED FILM, POLYETHYLENE NAPHTHALATE, 50 V, 0.0015 uF, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
CAP 0.1UF 50/63V 5% FILM-PPS SMD-1812 TR-7 SN100/NIBAR CAPACITOR, METALLIZED FILM, POLYETHYLENE NAPHTHALATE, 63 V, 0.1 uF, SURFACE MOUNT, 1812
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| File Size |
865.45K /
19 Page |
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AVX, Corp.
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| Part No. |
CB017D0102JBC CB017D0102KBC CB017D0103KBC CB017D0103JBC
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| OCR Text |
... of high temperature dielectric films makes these capacitors suitable for ir or vapor phase reflow processes. this chip is built without specific encapsulation. ?the intrinsic elasticity of the dielectric film allows an excellent compatibil... |
| Description |
CAPACITOR, FILM/FOIL, POLYETHYLENE NAPHTHALATE, 63 V, 0.001 uF, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, POLYETHYLENE NAPHTHALATE, 63 V, 0.01 uF, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
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| File Size |
126.77K /
1 Page |
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it Online |
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IMP Inc
IMP[IMP, Inc]
IMP Inc
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| Part No. |
C1210
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| OCR Text |
...acteristics
Diffusion & Thin films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Met... |
| Description |
Process C1210 CMOS 1.2mm Zero Threshold Devices
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| File Size |
33.75K /
4 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C1004
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| OCR Text |
...0m Per side
Diffusion & Thin films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Poly Sheet Resistance Metal-1 Sheet Resistance Metal-... |
| Description |
Process C1004
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| File Size |
30.83K /
2 Page |
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it Online |
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Price and Availability
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