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NXP Semiconductors N.V.
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| Part No. |
PBSS8110Z
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| OCR Text |
... high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb)...110 2 10 (1) (2) (3) v ce (v) 05 4 23 1 001aaa496 0.8 1.2 0.4 1.6 2 i c (a) 0 31.5 24.5 17.5 10.5 2... |
| Description |
100 V, 1 A NPN low VCesat (BISS) transistor
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| File Size |
139.53K /
14 Page |
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it Online |
Download Datasheet
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Korea Electronics (KEC)
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| Part No. |
BC848
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| OCR Text |
...e : according to the value of h fe the bc846, bc847, bc848 are classified as follows. characteristic symbol test condition min. typ. max. ...110 - 450 bc847 110 - 800 bc848 110 - 800 collector-emitter saturation voltage v ce(sat) 1 i c =... |
| Description |
General Purpose Transistor
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| File Size |
392.24K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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