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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW6IC2015NBR1 MW6IC2015GNBR1
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| OCR Text |
...cellular applications: GSM, GSM edge, PHS, tdma, CDMA, W - CDMA and TD - SCDMA. Final Application * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 Watts PEP, Full Frequency Band (1805 - 1880 MHz or 1... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
1,114.00K /
28 Page |
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MAXIM - Dallas Semiconductor
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| Part No. |
MAX98356
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| OCR Text |
...to the dac. data on the rising edge of pdm_clk is considered left-channel data while data on the falling pdm_clk edge is right channel. ...tdma noise from gsm radios s extensive click-and-pop reduction circuitry s robust short-circuit ... |
| Description |
PDM Input Class D Audio Power Amplifier
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| File Size |
407.66K /
22 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915NBR1_06 MW4IC915GNBR1 MW4IC915GNBR1_06 MW4IC915NBR1
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| OCR Text |
...uit is designed for GSM and GSM edge base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology...tdma, N - CDMA and W - CDMA. Final Application * Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
678.09K /
20 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
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| OCR Text |
...uit is designed for GSM and GSM edge base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology ...tdma, N-CDMA and W-CDMA. * Typical GSM/GSM edge Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,... |
| Description |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM edge. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的edge网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
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| File Size |
665.04K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1
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| OCR Text |
...uit is designed for GSM and GSM edge base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology...tdma, N - CDMA and W - CDMA. Final Application * Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
679.56K /
20 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S18060MBR1 MRD6S18060MR1
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| OCR Text |
... - 2000 MHz, 60 W, 26 V GSM/GSM edge LATERAL N - CHANNEL RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GS...tdma, CDMA, and multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
676.45K /
20 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
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| OCR Text |
...s designed for CDMA and GSM/GSM edge applications. It uses Motorola's newest high voltage (26 to 28 Volts) LDMOS IC technology and integrate...tdma, and CDMA. The device is packaged in a PFP-16 flat pack package that provides excellent thermal... |
| Description |
MHVIC915R2 CDMA, GSM/GSM edge, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
648.85K /
12 Page |
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it Online |
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MAXIM - Dallas Semiconductor
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| Part No. |
MAX98358DEVTQFN MAX98358EVSYSTQFN
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| OCR Text |
...to the dac. data on the rising edge of pdm_clk is considered left-channel data while data on the falling pdm_clk edge is right channel. ...tdma noise from gsm radios extensive click-and-pop reduction circuitry robust short-circuit ... |
| Description |
PDM Input Class D Audio Power Amplifier
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| File Size |
1,581.92K /
27 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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