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  diffused-junction Datasheet PDF File

For diffused-junction Found Datasheets File :: 5098    Search Time::2.562ms    
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    BU4506AZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506AZ
OCR Text Diffused Power Transistor BU4506AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 5 8 3 5 4 32 150 150 UNIT V V A A A...
Description Silicon Diffused Power Transistor BU4511AX

File Size 43.66K  /  6 Page

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    BU4506DF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506DF
OCR Text Diffused Power Transistor BU4506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 5 8 3 5 4 45 150 150 UNIT V V A A A...
Description Silicon Diffused Power Transistor

File Size 56.19K  /  6 Page

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    BU4506DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506DX
OCR Text Diffused Power Transistor BU4506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 5 8 3 5 4 45 150 150 UNIT V V A A A...
Description Silicon Diffused Power Transistor

File Size 58.37K  /  6 Page

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    BU4506DZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506DZ
OCR Text Diffused Power Transistor BU4506DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 5 8 3 5 4 32 150 150 UNIT V V A A A...
Description Silicon Diffused Power Transistor

File Size 56.77K  /  6 Page

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    BU4506 BU4506AF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU4506 BU4506AF
OCR Text Diffused Power Transistor BU4506AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 5 8 3 5 4 45 150 150 UNIT V V A A A...
Description Silicon Diffused Power Transistor

File Size 43.23K  /  6 Page

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    BU4507AX BU4507

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507AX BU4507
OCR Text Diffused Power Transistor BU4507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A ...
Description Silicon Diffused Power Transistor

File Size 64.93K  /  7 Page

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    BU4507AZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507AZ
OCR Text Diffused Power Transistor BU4507AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 8 15 4 6 5 32 150 150 UNIT V V A A ...
Description Silicon Diffused Power Transistor

File Size 63.46K  /  7 Page

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    BU4507DF BU4507

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507DF BU4507
OCR Text Diffused Power Transistor BU4507DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A ...
Description Silicon Diffused Power Transistor

File Size 53.29K  /  6 Page

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    BU4507DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507DX
OCR Text Diffused Power Transistor BU4507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A ...
Description Silicon Diffused Power Transistor

File Size 55.48K  /  6 Page

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    BU4507DZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4507DZ
OCR Text Diffused Power Transistor BU4507DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 8 15 4 6 5 32 150 150 UNIT V V A A ...
Description Silicon Diffused Power Transistor

File Size 54.02K  /  6 Page

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For diffused-junction Found Datasheets File :: 5098    Search Time::2.562ms    
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