| |
|
 |
IRF[International Rectifier]
|
| Part No. |
IRG4CC71KB
|
| OCR Text |
die in wafer Form
C
600 V Size 7.1
Ultra-Fast Speed Circuit Rated Rated
G E
6" wafer
Electrical Characteristics ( wafer Form )
Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage ... |
| Description |
IRG4CC71KB IGBT die in wafer Form
|
| File Size |
75.92K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INTERFET[InterFET Corporation]
|
| Part No. |
HF51A060ACE
|
| OCR Text |
die in wafer Form
600 V Size 51 5" wafer
Electrical Characteristics ( wafer Form )
Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.2V Max. 600V Min. 25A Max... |
| Description |
Hexfred die in wafer Form
|
| File Size |
15.03K /
1 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
IRF[International Rectifier]
|
| Part No. |
HF20A060ACE
|
| OCR Text |
die in wafer Form
600 V Size 20 6" wafer
Electrical Characteristics ( wafer Form )
Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.7V Max. 600V Min. 10A Max... |
| Description |
Hexfred die in wafer Form
|
| File Size |
24.18K /
1 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Osram Opto Semiconductors GmbH OSRAM[OSRAM GmbH]
|
| Part No. |
F2000D
|
| OCR Text |
... Diameter of the wafer Chiphohe die height Bondpaddurchmesser Diameter of bondpad Weitere Informationen Additional information2) Vorderseitenmetallisierung Metallization frontside Ruckseitenmetallisierung Metallization backside Trennverfahr... |
| Description |
InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)
|
| File Size |
211.09K /
6 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|