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  die wafer Datasheet PDF File

For die wafer Found Datasheets File :: 4915    Search Time::1.391ms    
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    B58600E0410A002 B58600E0410A003 B58600E0410A004 B58600E0410A005 B58600E0410A020 B58600E0410A021 B58600E0410A022 B58600E0

EPCOS
Part No. B58600E0410A002 B58600E0410A003 B58600E0410A004 B58600E0410A005 B58600E0410A020 B58600E0410A021 B58600E0410A022 B58600E0410A023
OCR Text die for wet media 2009-08-03 3 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please ...wafer (wafer level test measurement). Temperature coefficients of resistance Rs and Rs: The tempera...
Description Pressure sensors

File Size 125.24K  /  8 Page

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    MF1S5009DUD MF1S5009DA4

NXP Semiconductors
Part No. MF1S5009DUD MF1S5009DA4
OCR Text ... 1.5 Delivery options * Bumped die on wafer * MOA4 contactless module 2. Features and benefits 2.1 MIFARE RF Interface (ISO/IEC 14443 A) Contactless transmission of data and supply energy (no battery needed) Operating distance up to 1...
Description Mainstream contactless smart card IC for fast and easy solution development

File Size 250.06K  /  32 Page

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    PCA2000UAC PCA2001U1 PCA2001UAC PCA2001CX81 PCA2001CX85 PCA2000U10AC PCA2000CX81 PCA2000CX812 PCA2000CX85 PCA2000U1 PCA2

NXP Semiconductors N.V.
Part No. PCA2000UAC PCA2001U1 PCA2001UAC PCA2001CX81 PCA2001CX85 PCA2000U10AC PCA2000CX81 PCA2000CX812 PCA2000CX85 PCA2000U1 PCA200010 PCA2001U10AC
OCR Text ... PCA200xU Description wire bond die; 8 bonding pads; 1.16 x 0.86 x 0.22 mm wire bond die; 8 bonding pads; 1.16 x 0.86 x 0.22 mm wire bond di...wafer level chip-size package; 8 bumps wafer level chip-size package; 8 bumps wafer level chip-size ...
Description 32 kHz watch circuit with programmable adaptive motor pulse

File Size 217.89K  /  30 Page

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    IRF[International Rectifier]
Part No. IRG4CC71KB
OCR Text die in wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G E 6" wafer Electrical Characteristics ( wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage ...
Description IRG4CC71KB IGBT die in wafer Form

File Size 75.92K  /  2 Page

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    INTERFET[InterFET Corporation]
Part No. HF51A060ACE
OCR Text die in wafer Form 600 V Size 51 5" wafer Electrical Characteristics ( wafer Form ) Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.2V Max. 600V Min. 25A Max...
Description Hexfred die in wafer Form

File Size 15.03K  /  1 Page

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    IRF[International Rectifier]
Part No. HF20A060ACE
OCR Text die in wafer Form 600 V Size 20 6" wafer Electrical Characteristics ( wafer Form ) Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.7V Max. 600V Min. 10A Max...
Description Hexfred die in wafer Form

File Size 24.18K  /  1 Page

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    SL3S12031213 SL3S1203FTB0 SL3S1203FUF SL3S1213FTB0 SL3S1213FUF

NXP Semiconductors
Part No. SL3S12031213 SL3S1203FTB0 SL3S1203FUF SL3S1213FTB0 SL3S1213FUF
OCR Text ...r XSON6 Description bumped G2iL die on sawn 8" wafer bumped G2iL+ die on sawn 8" wafer Version not applicable not applicable Type number G2iL, plastic extremely thin small outline SOT886F1 package; no leads; 6 terminals; body 1 x 1.45 x ...
Description UCODE G2iL and G2iL

File Size 148.43K  /  22 Page

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    Osram Opto Semiconductors GmbH
OSRAM[OSRAM GmbH]
Part No. F2000D
OCR Text ... Diameter of the wafer Chiphohe die height Bondpaddurchmesser Diameter of bondpad Weitere Informationen Additional information2) Vorderseitenmetallisierung Metallization frontside Ruckseitenmetallisierung Metallization backside Trennverfahr...
Description InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)

File Size 211.09K  /  6 Page

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    IGC70T120T6RL

Infineon Technologies AG
Part No. IGC70T120T6RL
OCR Text ...T6RL VCE 1200V ICn 75A die Size 9.12 x 7.71 mm 2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness wafer size Flat position Max.possible chips ...
Description IGBT4 Low Power Chip

File Size 70.48K  /  5 Page

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    IGC70T120T6RM

Infineon Technologies AG
Part No. IGC70T120T6RM
OCR Text ...T6RM VCE 1200V ICn 75A die Size 9.12 x 7.71 mm 2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness wafer size Flat position Max.possible chips ...
Description IGBT4 Medium Power Chip

File Size 70.08K  /  5 Page

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For die wafer Found Datasheets File :: 4915    Search Time::1.391ms    
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