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  di-750 Datasheet PDF File

For di-750 Found Datasheets File :: 4243    Search Time::1.375ms    
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    2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ

NEC, Corp.
NEC Corp.
Part No. 2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ
OCR Text ... VGS = 0 V IF = 25 A, VGS = 0 V di/dt = 100 A / s TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = MIN. TYP. MAX. -10 UNIT A A V S m 20 V...750.1 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 0.750.3 2.54...
Description 25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263

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    NEC Corp.
NEC[NEC]
Part No. 2SK3481-Z 2SK3481-ZJ 2SK3481 2SK3481-S
OCR Text ... VGS = 0 V IF = 30 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10...750.3 2.54 TYP. 0.50.2 2.80.2 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 ...
Description SWITCHING N-CHANNEL POWER MOS FET

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    MTN8N65FP

Cystech Electonics Corp.
Part No. MTN8N65FP
OCR Text ...5, starting TJ=+25. 3. ISD7.5A, dI/dt100A/s, VDDBVDSS, starting TJ=+25. VDS VGS ID ID IDM EAS IAR EAR dv/dt TL 650 30 7.5* 4.5* 30* 21...750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F L L1 L2 Inches Min. Max. 0.408 0.392 0.58...
Description N-Channel Enhancement Mode Power MOSFET

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    RF MICRO DEVICES INC
Part No. STQ-2016Z
OCR Text ...anarity: 0.1mm 4. controlli ng di mensi on i s mi lli meter, converted i nch di mensi ons are not necessarily exact. 5. followed from jedec mo-153. stq 2016 lot i d part # 0.004 (0.1) 0.008 (0.2 ) 0.193 (4.9) 0.207 (5.2 5) 0 8 0.169 (4...
Description TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO16

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    http://
NEC[NEC]
NEC Corp.
Part No. 2SK3571 2SK3571-S 2SK3571-Z 2SK3571-ZK 2SK3571-ZK-AZ
OCR Text ... VGS = 0 V IF = 48 A, VGS = 0 V di/dt = 100 A/s Test Conditions VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V...750.3 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 0.750.1 2.54 ...
Description SWITCHING N-CHANNEL POWER MOSFET
48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 MP-25ZK, 3 PIN

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    TVA200SA-L TVA170SA-L

Tyco Electronics
Part No. TVA200SA-L TVA170SA-L
OCR Text ...p (A) 8 x 20 s 150 ITSM IPP (A) di/dt dV/dt 5 x 310 s Min. (A/s) (V/s) (VOC: 10 x 700s) (A) 90 22 500 2000 Telcordia GR-1089* IEC61000-4-5 I...750, Method 2026 per MIL-STD-750, Method 2031 per MIL-STD-750, Method 1022 per MIL-STD-750, Method 2...
Description SiBar Thyristor Surge Protectors

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    MTN13N50FP

Cystech Electonics Corp.
Part No. MTN13N50FP
OCR Text ...nction temperature. 3. ISD=10A, dI/dt<100A/s, VDD<BVDSS, TJ=+150. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Therm...750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F L L1 L2 Inches Min. Max. 0.408 0.392 0.58...
Description N-Channel Enhancement Mode Power MOSFET

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    TVA270SA04

Tyco Electronics
Part No. TVA270SA04
OCR Text ...1 IPP2 IPP3 IPP4 IPP5 IPP6 IPP7 di/dt di/dt Value 270 50 70 100 150 150 90 90 500 110 Units V A A A A A A A A/s A/s TSTG TA TJ TL -55 to 150 -40 to 125 +150 +260 C C C C ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25C...
Description Thyristor Surge Protectors

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    MTN10N65FP

Cystech Electonics Corp.
Part No. MTN10N65FP
OCR Text ...unction temperature. 3. ISD10A, dI/dt100A/s, VDDBVDSS, TJ=+150. VDS VGS ID ID IDM EAS EAR dv/dt TL TPKG Pd Tj, Tstg 650 30 10* 6 40* 2...750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F L L1 L2 Inches Min. Max. 0.408 0.392 0.58...
Description N-Channel Enhancement Mode Power MOSFET

File Size 644.78K  /  9 Page

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    MTN10N60FP

Cystech Electonics Corp.
Part No. MTN10N60FP
OCR Text ...unction temperature. 3. ISD10A, dI/dt100A/s, VDDBVDSS, TJ=+150. VDS VGS ID ID IDM EAS EAR dv/dt TL TPKG Pd Tj, Tstg 600 30 10* 6 40* 2...750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F L L1 L2 Inches Min. Max. 0.408 0.392 0.58...
Description N-Channel Enhancement Mode Power MOSFET

File Size 644.87K  /  9 Page

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