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dc-6ghz Datasheet PDF File

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				Hittite Microwave Corporation
Part No.	HMC590
OCR Text	...Output IP3: +41 dBm Gain: 24 dB DC Supply: +7.0 V @ 820 mA 50 Ohm Matched Input/Output Die Size: 2.47 mm x 1.33 mm x 0.1 mm Functional Di...6GHz 7GHz 8GHz 9GHz 10GHz 50 40 30 20 10 6GHz 7GHz 8GHz 9GHz 10GHz 0 -20 -18 -16 -14 -12 -10 ...
Description	GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
File Size	351.39K / 8 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC591
OCR Text	...Output IP3: +43 dBm Gain: 23 dB DC Supply: +7.0 V @ 1340 mA 50 Ohm Matched Input/Output 2.47 mm x 2.49 mm x 0.1 mm Functional Diagram ...6GHz 7GHz 8GHz 9GHz 10GHz -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 6 6.5 7 7.5 8 +25C +85C -...
Description	GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
File Size	364.76K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	S1T8536X01-T0R0 S1T8536
OCR Text	...ential ports are used to supply DC voltage to the VCO as well as tune the center frequency of the VCO. 4 5 6 GNDPLL VCCPLL VREGPLL VCCPLL Ground of PLL section (Note 1). Supply of PLL section. PLL regulator output (2.85V). Require...
Description	2.4GHZ-2.5GHZ SINGLE-CHIP RF TRANSCEIVER Data Sheet
File Size	312.82K / 24 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL410IK-3C
OCR Text	...Case Temperature Tc=25oC) Item DC Input Voltage Gate Current Gate Current Operating Channel Temperature Symbol VDS IGF IGR Tch RG=5 RG=5 Co...6GHz 80 Power Added Efficiency[%] 70 60 50 40 30 20 10 0 46 Output Power [dBm] 44 42 40 38 36 ...
Description	L-Band High Power GaAs FET
File Size	242.33K / 6 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics Eudyna Devices Inc Fujitsu Media Devices Limited Fujitsu Component Limited.
Part No.	FLL410IK-4C
OCR Text	...Case Temperature Tc=25oC) Item DC Input Voltage Gate Current Gate Current Operating Channel Temperature Symbol VDS IGF IGR Tch RG=5 RG=5 Co...6GHz Pin=38dBm Pin=34dBm 48 46 Output Power [dBm] 44 42 40 38 36 34 32 3.3 3.4 VDS=12V, IDS(D...
Description	L-Band High Power GaAs FET
File Size	244.15K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP650E6327 BFP650
OCR Text	...s otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 A Collector-base cutoff current VCB...6GHz 4 Mar-27-2003 For examples and ready to use parameters please contact your loca...
Description	NPN Silicon Germanium RF Transistor
File Size	179.20K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP650
OCR Text	...s otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, I B = 0 Collector-emitter cutoff current V...6GHz 4 Jan-08-2004 BFP650 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS...
Description	Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
File Size	207.23K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFR280
OCR Text	... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...6GHz For examples and ready to use parameters please contact your local Infineon Technologies distr...
Description	RF-Bipolar - NPN Silicon RF transistor for low noise, low power amplifiers
File Size	77.16K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFR92P
OCR Text	... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...6GHz For examples and ready to use parameters please contact your local Infineon Technologies distr...
Description	NPN Silicon RF Transistor
File Size	79.39K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFR92T
OCR Text	... otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VC...6GHz For examples and ready to use parameters please contact your local Infineon Technologies dis...
Description	RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches
File Size	68.70K / 7 Page	View it Online	Download Datasheet

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