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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM75DU-24H
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| OCR Text |
...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 , Resistive Load Switching Operation IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Conditio... |
| Description |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
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| File Size |
57.58K /
4 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM75DU-24H
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| OCR Text |
...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2, Resistive Load Switching Operation IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Condition... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
45.60K /
4 Page |
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it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors] Powerex, Inc.
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| Part No. |
CM75DU-24F
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| OCR Text |
...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 , Inductive Load Switching Operation IE = 75A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - ... |
| Description |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
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| File Size |
106.60K /
4 Page |
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it Online |
Download Datasheet
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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM75DU-12F
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| OCR Text |
...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Inductive Load Switching Operation IE = 75A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - ... |
| Description |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
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| File Size |
371.85K /
4 Page |
View
it Online |
Download Datasheet
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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM75BU-12H
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| OCR Text |
...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Resistive Load Switching Operation IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Conditio... |
| Description |
Four IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
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| File Size |
71.90K /
4 Page |
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it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HU-24H
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| OCR Text |
...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1 , Resistive Load Switching Operation IE = 600A, diE/dt = -1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Con... |
| Description |
Single IGBTMOD 600 Amperes/1200 Volts Single IGBTMOD 600 Amperes/1200 Volts
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| File Size |
55.98K /
4 Page |
View
it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM600HU-24H
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| OCR Text |
...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1, Resistive Load Switching Operation IE = 600A, diE/dt = -1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Cond... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
40.83K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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