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VMPBNCF BD790 SS495A SST39 SSP2N90A 99259 11640 MAH16063
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  cres Datasheet PDF File

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    IRG4PC40W IRG4PC40

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4PC40W IRG4PC40
OCR Text ... tr td(off) tf Ets LE Cies Coes cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off S...
Description 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 2.05V,@和VGE \u003d 15V的,集成电路\u003d 20A条)

File Size 115.15K  /  8 Page

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    IRG4PC50FD IRG4PC50FD-E

IRF
International Rectifier, Corp.
Part No. IRG4PC50FD IRG4PC50FD-E
OCR Text ... tr td(off) tf Ets LE Cies Coes cres t rr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switch...
Description 600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.45伏,@和VGE \u003d 15V的,集成电路\u003d 39A条)

File Size 210.61K  /  10 Page

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    IRG4PC50F IRG4PC50F-E

IRF[International Rectifier]
Part No. IRG4PC50F IRG4PC50F-E
OCR Text ... tr td(off) tf Ets LE Cies Coes cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off S...
Description 70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package

File Size 145.20K  /  8 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM75DU-24H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 , Resistive Load Switching Operation IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Conditio...
Description Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT

File Size 57.58K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM75DU-24H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2, Resistive Load Switching Operation IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Condition...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 45.60K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Part No. CM75DU-24F
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 , Inductive Load Switching Operation IE = 75A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - ...
Description Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT

File Size 106.60K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM75DU-12F
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Inductive Load Switching Operation IE = 75A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - ...
Description Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts

File Size 371.85K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM75BU-12H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Resistive Load Switching Operation IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Conditio...
Description Four IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT

File Size 71.90K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM600HU-24H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1 , Resistive Load Switching Operation IE = 600A, diE/dt = -1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Con...
Description Single IGBTMOD 600 Amperes/1200 Volts
Single IGBTMOD 600 Amperes/1200 Volts

File Size 55.98K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM600HU-24H
OCR Text ...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1, Resistive Load Switching Operation IE = 600A, diE/dt = -1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Cond...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 40.83K  /  4 Page

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