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9 161 Datasheet PDF File

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				ADPOW[Advanced Power Technology]
Part No.	APT5022AVR
OCR Text	...0 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5803 Rev A 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C)...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description	POWER MOS V 500V 21A 0.220 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.67K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	...GE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 -50 2.0 1.5 1.0 0.5 0.7 050-5802 Rev B 0.0 -50 -25 0 25 50 75 100 125 150 TJ, ...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	...RAIN CURRENT (AMPERES) 12 9 6 3 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATUR...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	... 10 Sec. M 1200 4.5 5.5 2.9 3.5 6.5 3.4 4.1 1.0 2 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.3...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M38JFLL
OCR Text	...5C Tj = 25C Tj = 125C 2.2 9.0 16 33 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characte...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.39K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT50M38JLL
OCR Text	...) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.38K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text	...Ohms A nA Volts 050-7117 Rev - 9-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50M50JLC APT5010JLC
OCR Text	...) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0....
Description	POWER MOS VI 500V 77A 0.050 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	... di/dt = 100A/s) 300 600 2.2 9.0 16 33 THERMAL / PACKAGE CHARACTERISTICS Symbol RJC RJA VIsolation Torque Characteristic Junction to ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	...D, DRAIN CURRENT (AMPERES) 0.9 0 50 100 150 200 250 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS, DRAIN-...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

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