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Vishay
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| Part No. |
TZS4678...TZS4717
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| OCR Text |
... a v ma v tzs4678 1.8 1.710 1.890 7.5 1.0 120 0.70 tzs4679 2.0 1.900 2.100 5.0 1.0 110 0.70 tzs4680 2.2 2.090 2.310 4.0 1.0 100 0.75 tzs46...1000 v voltage change ( mv ) z v z z-voltage ( v ) 25 95 9598 i z =5ma t j =25 ? figure 2. ... |
| Description |
Silicon Epitaxial Planar Z-Diodes
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| File Size |
123.09K /
6 Page |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
http://
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| Part No. |
L3458-03 L2204 L2204-01 L2204-03 L2402-01 L2402-02 L3458-01
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| OCR Text |
.... Typ. Max. 920 945 970 870 7.0 890 920 870 9.0 890 920 45 1.30 1.40 2.3 2.6 5 6.0 0.5 1.2 2.0 1.3 2.0 80 1.40 1.50 2.8 3.4 5 9.0 0.8 0.45 0...1000
RELATIVE RADIANT OUTPUT (%)
80
RADIANT FLUX (mW)
L2402 SERIES 60
100
L3458 SE... |
| Description |
4-pin plastic package, infrared LED
4-pin plastic package/ infrared LED
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| File Size |
132.34K /
4 Page |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
L2656-03 L2656
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| OCR Text |
...0 % Min. 870 13 -
L2656 Typ. 890 50 1.45 3.4 15 1.7 0.45 0.45
Max. 920 1.6 4.0 5 0.7 0.7
Min. 870 7.5 -
L2656-03 Typ. Max. 890 9...1000 (Typ. Ta=25 C, tw=100 s, 0.1 %)
s Forward current vs. forward voltage
1000
RELATIVE RADI... |
| Description |
High power GaAIAs infrared LED
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| File Size |
127.71K /
2 Page |
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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
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| Part No. |
1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1N4702 1N4700 1N4680 1N4681 1N4707 1N4701 1N4704 1N4678 1N4687 1N4690 1N4689 1N4715 1N4711 1N4710 1N4693 1N4688 1N4696 1N4692 1N4697 1N4695 1N4691 1N4679 1N4682 1N4712 1N4716 1N4699
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| OCR Text |
...3.705 4.085 4.465 4.845 5.320 5.890 6.460 7.125 7.790 8.265 8.645 9.500 10.45 11.40 12.35 13.30 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22...1000 - Voltage Change ( mV )
Figure 3. Typical Change of Working Voltage vs. Junction Temperature... |
| Description |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
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| File Size |
66.71K /
6 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTRR
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| OCR Text |
... 3.60 10.9 1.46 2.6 70 -- 36 -- 890 -- 890 -- 3.83 -- 7.5 -- 280 -- 30 -- 4.0 -- 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 -- 235 -- Cond...1000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical S... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
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| File Size |
187.77K /
10 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA INC
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| Part No. |
MZPY6.2DRL MZPY6.2CRL2 MZPY6.2CTA2 MZPY6.8CRL2 MZPY6.8CTA MZPY6.8DRL2 MZPY6.2DTA MZPY6.8RL2 MZPY6.8CTA2 MZPY6.8DTA2 MZPY6.2DRL2 MZPY5.6CRL MZPY5.6CTA MZPY5.6CTA2 MZPY5.6DRL MZPY5.6DRL2 MZPY5.6DTA MZPY5.6DTA2 MZPY5.1RL2
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| OCR Text |
...970 1n4733a 5.1 49 7 550 1 10 1 890 1n4734a 5.6 45 5 600 1 10 2 810 1n4735a 6.2 41 2 700 1 10 3 730 1n4736a 6.8 37 3.5 700 1 10 4 660 1n4737...1000 0.25 5 22.8 150 1n4752a 33 7.5 45 1000 0.25 5 25.1 135 1n4753a 36 7 50 1000 0.25 5 27.4 125 1n4... |
| Description |
6.2 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
6.8 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
5.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
5.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
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| File Size |
83.67K /
8 Page |
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it Online |
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Price and Availability
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