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IRF[International Rectifier]
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| Part No. |
8EWF06SPBF
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| OCR Text |
...e (C)
140 130 120 110 100 90 80 70 60 0 1 2 3 30
8EWF Series ..S R thJC (DC) = 2.5 C/ W
Maximum Allowable Case T emperature (C)
...160 140 120 100 80 60
Maximum Non Repetitive S urge Current Versus Pulse T in Duration. ra Initia... |
| Description |
SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE
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| File Size |
255.32K /
8 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT58M50J
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| OCR Text |
...
GS
= 7,8 & 10V
120 100 80 60 40
5V
6V
TJ = 25C
150 100 50 0
TJ = 125C
TJ = 150C
20 25 20 15 10 5 0 VDS(ON), DRAIN-TO...160 120 80 40 0 0
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5... |
| Description |
N-Channel MOSFET
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| File Size |
262.29K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT6013JVR
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| OCR Text |
... DRAIN CURRENT (AMPERES) 100 6V 80 VGS=7V, 10V & 15V 5.5V 60
80 5.5V 60
40
5V
40
5V
20
4.5V
20
4.5V
0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON)... |
| Description |
POWER MOS V 600V 40A 0.130 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
70.89K /
4 Page |
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it Online |
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MAXIM - Dallas Semiconductor
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| Part No. |
MAX8630YETD15 MAX8630YETD20
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| OCR Text |
....6 3.3 3.0 10 20 30 40 50 60 70 80 90 100 0 2.7 4.2 i led = 1.875ma i led = 8.125ma i led = 20ma v in falling input current vs. input vo...160 0 2.7 4.2 i led = 8.125ma i led = 1.875ma i led = 20ma v in falling input current vs. input ... |
| Description |
125mA 1x/1.5x Charge Pumps for 5 White LEDs in 3mm x 3mm TDFN
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| File Size |
238.21K /
12 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT6013JVR
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| OCR Text |
...AIN CURRENT (AMPERES)
100 6V 80 VGS=7V, 10V & 15V 5.5V 60
80 5.5V 60
40
5V
40
5V
20
4.5V
20
4.5V
0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
67.42K /
4 Page |
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it Online |
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VISHAY SEMICONDUCTORS
IRF[International Rectifier]
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| Part No. |
85EPS12J 85EPS 85EPS08 85EPS08J 85EPS12
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| OCR Text |
... (C) 150 140 130 120 110 100 90 80 70 0 20 40 60 30 60 90
Conduction Angle
85EPS.. Series R (DC) = 0.35 C/W
thJC
150 140 130 120 110...160 140 120 100 80 60 40 20 0 0 20 40 60 DC 180 120 90 60 30 RMS Limit
Conduction Period
140 120... |
| Description |
85 A, 1200 V, SILICON, RECTIFIER DIODE
800V5A条性病。恢复二极管在PowIRtab（短）封
INPUT RECTIFIER DIODE
800V 85A Std. Recovery Diode in a PowIRtab (Short)package
1200V 85A Std. Recovery Diode in a PowIRtabpackage
1200V 85A Std. Recovery Diode in a PowIRtab (Short)package
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| File Size |
119.33K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
80EPF12 80EPF10
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| OCR Text |
... 25C @ 1A, - 100A/s
80EPF..
80 1000 to 1200 1100 1.2 90 - 40 to 150
Units
A V A V ns
TO-247AC
C
www.irf.com
1
80EPF.. H...160 200
Rate of Fall Of Forward Current - di/dt (A/s) Fig. 8 - Recovery Time Characteristics, TJ = ... |
| Description |
1200V Fast Recovery Diode in a TO-247AC package
FAST SOFT RECOVERY RECTIFIER DIODE
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| File Size |
174.09K /
7 Page |
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it Online |
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