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  8.3-9.5a Datasheet PDF File

For 8.3-9.5a Found Datasheets File :: 46241    Search Time::2.625ms    
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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ...ssipation Drain Current 0.8 -1 -0.3 -0.1 DC 0.4 er at Operation in ion this area is limited by R DS(on) Op 10 10 s PW 1 0 = ms s (1 10 m sh s ot) -0.03 0 50 100 150 Ta (C) 200 Ta = 25 C -0.01 -0.1 -0.3 -1 -3 -10 ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...e. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ499] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ501

SANYO[Sanyo Semicon Device]
Part No. 2SJ501
OCR Text ...ource 3 : Drain SANYO : CP 0.8 1.1 Ratings -20 10 -0.5 -2.0 0.25 150 -55 to +150 Unit V V A A W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sour...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 237.49K  /  4 Page

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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ...ource 3 : Drain SANYO : CP 0.8 1.1 Ratings -30 20 -0.5 -2.0 0.25 150 -55 to +150 Unit V V A A W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sour...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ...l Output Characteristics -10 V -8 V -20 -4.5 V Pulse Test -5 V -6 V -16 -4 V -12 Typical Transfer Characteristics -20 V DS = -10 V Pulse ...3.5 V -8 -3 V -4 VGS = -2.5 V 0 -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) -8 -4 75...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ520 2SJ520TP-FA

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. 2SJ520 2SJ520TP-FA
OCR Text ... 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SJ520] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 ...
Description P-Channel Silicon MOSFET Load Switching Applications
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 20V的五(巴西)直| 10A条(丁)|52VAR

File Size 43.24K  /  4 Page

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    2SJ522

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SJ522
OCR Text ... 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 1 : Gate 2 : Drain 3 : Source SANYO : SMP 2.55 2.55 unit : mm 2090A [2SJ522] 0.8 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 30.28K  /  4 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ... t rr -60 20 -- -- -1.0 -- -- 1.8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.3 0.5 3 220 110 35 10 30 45 35 -1.35 55 Max -- -- -10 10 -2.0 0.4 0.8 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -5A, VG...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... Ratings -60 20 -10 -40 -10 -10 8.5 20 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ... I AP Note3 Note3 Note2 -10 8.5 40 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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For 8.3-9.5a Found Datasheets File :: 46241    Search Time::2.625ms    
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