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120000 LT1114AM 5013D SA117 MP804 KSC3953 40505 530XB7C
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For 8-row Found Datasheets File :: 18433    Search Time::1.75ms    
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    HYS72T64001HR HYB18T256400AF

Qimonda AG
Part No. HYS72T64001HR HYB18T256400AF
OCR Text ... module organization and 32m 8, 64m 4 chip organization ? standard double-data-rate-two synchronous drams (ddr2 sdram) with a single +...row precharge time t rp 15 12 15 ns min. row active time t ras 45 45 45 ns min. row cycle time t rc ...
Description 240-Pin Registered DDR2 SDRAM Modules
   240-Pin Registered DDR2 SDRAM Modules

File Size 1,498.93K  /  67 Page

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    Nanya
Part No. M2Y1G64TU88G7B M2Y1G64TU88G7B-AC M2Y1G64TU88G7B-BD M2Y1G64TU88G7B-3C M2Y2G64TU8HG5B-BD
OCR Text 8 g 7 b / m2y2g 64 t u8 h g5b 1gb: 128m x 64 / 2gb : 256m x 64 unbuffer ed ddr2 sdram dimm pre...row/column/rank) C 1gb ? 14/10/2 addressing (row/column/rank) C 2gb ? serial presence d...
Description Unbuffered DDR2 SDRAM DIMM

File Size 310.42K  /  14 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33...Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Out...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ...2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33...Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Out...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ...2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33...Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Out...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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    Toshiba America Electronic
Part No. TC59YM916BKG24A
OCR Text ...cess granularity. the device's 8 banks support up to four interleaved transactions. features ? highest pin bandwidth available ? 400...row column width b. data rate measured in mbit/s per dq differential pair. see ?timing co...
Description 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

File Size 1,426.32K  /  76 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HMT41GV7BMR4C-H9
OCR Text ...th the ddr3l sdram datasheet ? 8 internal banks ? data transfer rates: pc3-10600, pc3-8500 ? bi-directional differential data strobe ...row address a0-a14 a0-a14 a0-a14 a0-a14 column address a0-a9 a0-a9 a0-a9 a0-a9,a11 bank address ba0...
Description DDR DRAM MODULE, DMA240

File Size 1,060.21K  /  61 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HMT41GS6MFR8C-RD
OCR Text ... the ddr3 sdram datasheet ? 8 internal banks ? data transfer rates: pc3-14900, pc3-12800, pc3-10600, pc3-8500, or pc3-6400 ? bi-dir...row address a0-a15 column address a0-a9 bank address ba0-ba2 page size 1kb rev. 0.2 / aug. 2011 5 ...
Description DDR DRAM MODULE, DMA204

File Size 345.31K  /  48 Page

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