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  8 1m Datasheet PDF File

For 8 1m Found Datasheets File :: 26588    Search Time::3.797ms    
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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ... s 1210 520 180 16 140 90 80 42 8.0 10 1.0 125 280 -1.0 5.0 MIN. TYP. 70 120 -1.5 12 -10 # 10 MAX. 100 185 -2.0 UNIT m m V S A A ...1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s | yfs | - Forward Transfer Admittance - S ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...00 m (MAX.) (VGS = -10 V, ID = -8 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate prote...1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s | yfs | - Forward Transfer Admittance - S ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...0 74 12 16 1.0 130 290 1.5 -1.0 8.0 MIN. TYP. 39 61 -1.5 15 -10 +10 MAX. 50 88 -2.0 UNIT m: m: V S PA PA pF pF pF ns ns ns ns nC nC nC V...1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ... 580 40 220 600 380 140 12 46 0.8 160 400 1.5 -1.0 12 MIN. TYP. 24 38 -1.5 24 -10 m10 MAX. 30 56 -2.0 UNIT m m V S A A pF pF pF ns ns ns...1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance ...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...e. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3...1m ID= --10A DC op Drain Current, ID -- A td (off) tr 10 s 100A tf 100 7 5 3...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ501

SANYO[Sanyo Semicon Device]
Part No. 2SJ501
OCR Text ...ource 3 : Drain SANYO : CP 0.8 1.1 Ratings -20 10 -0.5 -2.0 0.25 150 -55 to +150 Unit V V A A W C C Electrical Characteristics a...1m s 10 ms Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 7 -0.1 2 3 5 7 -1.0...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 237.49K  /  4 Page

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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ...ource 3 : Drain SANYO : CP 0.8 1.1 Ratings -30 20 -0.5 -2.0 0.25 150 -55 to +150 Unit V V A A W C C Electrical Characteristics a...1m s 10 ms er tr 10 7 5 3 2 td(on) at io n Operation in this area is limited by ...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ503 2SJ503TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ503 2SJ503TP-FA
OCR Text ... 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP ...1m s Drain Current, ID - A 10 100 7 5 3 2 10 7 5 3 2 1.0 7 -0.1 2 3 5 td(off) tf ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR
P-Channel Silicon MOSFET DC/DC Converter Applications

File Size 86.59K  /  4 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...tput Characteristics -50 -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltag...1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ...cs -100 -4.5 V Pulse Test -5 V -8 V -80 -4 V -60 -3.5 V -40 -3 V -20 VGS = -2.5 V 0 -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) Ty...1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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