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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM75E3Y-2H QM75E2Y-2H QM75E2Y
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| OCR Text |
...rent .......................... 75A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Ins...IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse vo... |
| Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
102.45K /
6 Page |
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Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM75E3Y-H QM75E2Y-H
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| OCR Text |
...rent .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 In...IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse vo... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型 MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
88.87K /
6 Page |
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ROHM[Rohm]
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| Part No. |
QS5U23
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| OCR Text |
...S=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15 VGS=-4.5V RL=20 RGS=10 VDD
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current... |
| Description |
Small switching (-20V, -1.5A)
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| File Size |
57.98K /
5 Page |
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ROHM[Rohm]
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| Part No. |
QS5U26
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| OCR Text |
...=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15V VGS=-4.5V RL=20 RGS=10 VDD -15V VGS=-4.5V ID=-1.5A
!Body diode (Source-drain)
<MOSFET>
Parameter Forward voltage Symbol V... |
| Description |
From old datasheet system Pch Treueh MOSFET with a Schottky barrier Diode
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| File Size |
46.36K /
4 Page |
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ROHM[Rohm]
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| Part No. |
QS6U22
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| OCR Text |
...4.5V ID= -1.5A, VGS= -4V ID= -0.75A, VGS= -2.5V VDS= -10V, ID= -0.75A VDS= -10V VGS=0V f=1MHz ID= -0.75A VDD -15V VGS= -4.5V RL=20 RG=10 VDD -15V VGS= -4.5V RL=10 / RG=10 ID= -1.5A
Pulsed
!Body diode (Source-drain)
MOSFET... |
| Description |
Small switching (−20V, −1.5A)
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| File Size |
47.39K /
4 Page |
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ROHM[Rohm]
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| Part No. |
RB480Y_1 RB480Y RB480Y1
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| OCR Text |
...cture
ROHM : EMD4 JEITA : SC-75A Size dot (year week factory)
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.50.1 0 1.750.1 0.30...IFSM Tj Tstg
Limits 30 100 1 125 -40 to +125
Unit V mA A
(*1) Rating of per diode
Electr... |
| Description |
Schottky barrier diode
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| File Size |
132.29K /
4 Page |
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ROHM[Rohm]
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| Part No. |
RB480Y
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| OCR Text |
....00.1
ROHM : EMD4 JEITA : SC-75A Size dot (year week factory)
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.50.1 0 1.750.1 0.30...IFSM Tj Tstg
Limits 30 100 1 125 -40 to +125
Unit V mA A
(*1) Rating of per diode
Electr... |
| Description |
Schottky barrier diode
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| File Size |
154.28K /
4 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RB481Y-90_1 RB481Y-90
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| OCR Text |
...cture
ROHM : EMD4 JEITA : SC-75A Size dot (year week factory)
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1
...IFSM Tj Tstg
Limits 90 90 100 1 125 -40 to +125
Unit V V mA A
(*1) Rating of per diode
E... |
| Description |
Schottky barrier diode
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| File Size |
150.34K /
4 Page |
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ROHM[Rohm]
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| Part No. |
RB481Y_1 RB481Y
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| OCR Text |
...lanar
ROHM : EMD4 JEITA : SC-75A Size dot (year week factory)
Structure
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.50.1 0...IFSM Tj Tstg Limits 30 100 1 125 -40 to +125 Unit V mA A
Min. -
Typ. -
Max. 0.28 0.33 0.4... |
| Description |
Schottky barrier diode
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| File Size |
153.01K /
4 Page |
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DIODES[Diodes Incorporated]
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| Part No. |
RB557W
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| OCR Text |
...EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory)
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.550.1 0 1.750.1 0.30.1
3....IFSM Tj Tstg
Limits 30 100 500 125 -40 to +125
Unit V mA mA
(*1) Rating of per diode
Ele... |
| Description |
Schottky barrier diode
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| File Size |
150.73K /
4 Page |
View
it Online |
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Price and Availability
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