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74004 M32186 BYX90G SILICON 2SD24 1SMA5935 190MS8E ISL97692
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  70 30 Datasheet PDF File

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    NT511740C5J-70 NT511740C5J NT511740C5J-50 NT511740C5J-60

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Part No. NT511740C5J-70 NT511740C5J NT511740C5J-50 NT511740C5J-60
OCR Text ...J-50 NT511740C5J-60 NT511740C5J-70 t RA C tA A 50ns 25ns 60 ns 30 ns 70 ns 35 ns t CA C 13ns 15 ns 20 ns t O EA 13ns 15 ns 20 ns (M in.) 84ns 104 ns 124 ns Operation(M ax.) Standby(M ax.) 660m W 605m W 5.5 m W 550 m W C ycle Time Power Diss...
Description The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. 该NT511740C5J194304字4位动态随机存储器的NTC热敏假的吗?拧CMOS硅栅技术

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    TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L TC554161AFTI-10 TC554161AFTI-85 TC554161AFTI-85L TC554161AFTI

TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Part No. TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L TC554161AFTI-10 TC554161AFTI-85 TC554161AFTI-85L TC554161AFTI
OCR Text 70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC...30 29 28 A4 A5 A6 A7 NC I/O1 I/O2 VDD GND I/O3 I/O4 LB OE OP NC I/O5 I/O6 GND VDD I/O7 I/O8 A8 A9 A1...
Description 262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 138.12K  /  10 Page

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    Infineon
Part No. HYM321160GS-70 HYM321160GS-60 HYM321160S-70 HYM321160S-60 HM321160
OCR Text 70 Advanced Information * 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 6...30 31 A9 32 33 RAS2 34 35 N.C. 36 A0-A9 DQ0-DQ31 CAS0 - CAS3 RAS0, RAS2 WE Address Inputs Data...
Description 1M x 32-Bit Dynamic RAM Module (2M x 16-Bit Dynamic RAM Module)
From old datasheet system

File Size 45.95K  /  10 Page

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    Hynix Semiconductor, Inc.
Part No. HY628100BLLG-70
OCR Text ... c ) hy628100b 4.5~5.5 50*/ 55/70/85 10 100 20 0~70 comment : 50ns is available with 30pf test load. pin connection 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 vcc a15 /we a13 a8 a9 a11 /oe a1...
Description IC-SMD-SRAM 1MB 集成电路贴片静态存储器1MB

File Size 129.21K  /  9 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TC55W1600FT-70 TC55W1600FT TC55W1600FT-55
OCR Text 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRI...30 ns CE2 Access Time OE Access Time * Package: TSOP 48-P-1220-0.50 (Weight: 0.52 g typ) ...
Description 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM

File Size 198.22K  /  13 Page

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    EFA025A-70 EFA025A-100P

Excelics Semiconductor, Inc.
Part No. EFA025A-70 EFA025A-100P
OCR Text 70 updated 04/28/2006 low distortion gaas power fet specifications are subjec t to c...30 40 ms v p pinch-off voltage v ds = 3 v, i ds = 1.0 ma -2.0 -3.5 v bv gd drain ...
Description Low Distortion GaAs Power FET

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    Dallas Semiconductor Corp
Part No. DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB-70-IND
OCR Text ...d write access times as fast as 70 ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the ...30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3...
Description NVRAM (Battery Based)
From old datasheet system
NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC

File Size 186.70K  /  11 Page

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    BLF1820-70 BLF1820-70_2

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BLF1820-70 BLF1820-70_2
OCR Text 70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specifi...30 dim (dBc) -25 Fig.1 Simplified outline SOT502A. 2003 Feb 10 2 Philips Semiconductors ...
Description From old datasheet system
UHF power LDMOS transistor

File Size 98.58K  /  12 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB511000BJL-70 HYB511000BJL-60 HYB511000BJL-50 HYB511000BJ-70 HYB511000BJ-60 HYB511000BJ-50 HYB511000BJ- Q67100-Q527 Q67100-Q1056 Q67100-Q518 Q67100-Q519 Q67100-Q526
OCR Text 70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns...30 35 - 20 50 - 10.000 min. 130 155 45 70 - - - - 0 0 3 50 70 -70 max. - - - - 70 20 35 40 - 20 50 -...
Description -1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
Low Power 1 M x 1-Bit Dynamic RAM
1 M x 1-Bit Dynamic RAM Low Power 1 M ? 1-Bit Dynamic RAM

File Size 190.90K  /  22 Page

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    SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361140S-60 HYM361120GS-70 HYM361120GS-60 HYM361120-70 HYM361120-60 Q67100-Q960 Q67100-Q741 Q67100-Q1019 Q67100-Q961 HYM361120 HYM361120S-60 HYM361120S-70 Q67100-Q651 Q67100-Q942 Q67100-Q958 Q67100-Q959
OCR Text 70 Advanced Information * 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) Fast access and cycle time...30 35 - 20 50 - 10000 200000 - - - 10000 45 30 - - - - - - tRC tPC tRAC tCAC tAA 110 40 - - - ...
Description 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72

File Size 134.50K  /  9 Page

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