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  60 80 105 Datasheet PDF File

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    2SJ130 2SJ130L 2SJ130S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ130 2SJ130L 2SJ130S
OCR Text ...I D = -0.5 A, VGS = -10 V, RL = 60 Test conditions I D = -10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -240 V, VGS = 0 I D...80 120 40 Case Temperature TC (C) 160 0.05 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 Drain Current ID (A...
Description Power switching MOSFET
Silicon P-Channel MOS FET

File Size 47.28K  /  8 Page

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    2SJ172

HITACHI[Hitachi Semiconductor]
Part No. 2SJ172
OCR Text ... Pch* Tch Tstg 2 1 Ratings -60 20 -10 -40 -10 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item ...80 120 Case Temperature TC (C) 160 -0.5 -1.0 -2 Drain Current ID (A) -5 -10 4 2SJ1...
Description Silicon P-Channel MOS FET

File Size 41.90K  /  7 Page

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    2SJ217

NEC
Hitachi Semiconductor
Part No. 2SJ217
OCR Text ... Pch* Tch Tstg 2 1 Ratings -60 20 -45 -180 -45 150 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Ite...80 Drain Current ID (A) -60 -4 V -30 75C -40 -3 V -20 VGS = -2 V 0 -8 -20 -4 -12 -16 ...
Description Silicon P-Channel MOS FET

File Size 48.19K  /  9 Page

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    2SJ221

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ221
OCR Text ...d (on) -20 -4 -40 VDS -60 VGS -80 VDD = -50 V -25 V -10 V -8 -12 -16 -100 0 20 60 80 40 Gate Charge Qg (nc) -20 100 5 -0.1 -0.3 -1 -3 -10 -30 Drain Current ID (A) -100 2SJ221 Reverse Drain Current ...
Description Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET

File Size 47.48K  /  8 Page

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    2SJ222

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ222
OCR Text ... Power vs. Temperature Derating 60 Channel Dissipation Pch (W) -100 -30 Drain Current ID (A) 40 -10 -3 -1 -0.3 -0.1 -1 D C 10 0 Maximum Safe Operation Area 10 s PW O pe 1 = m s 10 s m s ra tio (1 ...
Description Silicon P-Channel MOS FET

File Size 33.29K  /  6 Page

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    2SJ247

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ247
OCR Text ... Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area -50 -30 -10 Drain Current I D (A) 40 -3 -1 PW 1...80 120 160 0.5 -0.1 -0.2 Case Temperature Tc (C) -0.5 -1 -2 -5 Drain Current I D (A) ...
Description Silicon P-Channel MOS FET

File Size 46.46K  /  8 Page

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    2SJ278

Sanyo Semicon Device
Hitachi Semiconductor
Part No. 2SJ278
OCR Text ... Pch* Tch Tstg 2 1 Ratings -60 20 -1 -4 -1 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value on t...80 28 7 8 30 25 -1.1 90 Max -- -- 5 -10 -2.25 0.83 1.2 -- -- -- -- -- -- -- -- -- -- Unit V V A A V ...
Description Silicon P-Channel MOS FET

File Size 41.20K  /  8 Page

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    2SJ350

HITACHI[Hitachi Semiconductor]
Part No. 2SJ350
OCR Text ... -16 -20 100 -200 0 20 40 60 80 Gate Charge Qg (nc) Drain Current I D (A) 5 2SJ350 Reverse Drain Current vs. Source to Drain Voltage -10 Reverse Drain Current I DR (A) Pulse Test -8 -6 -4 -10 V -5 V -2 V GS = 0, ...
Description Silicon P-Channel MOS FET

File Size 46.11K  /  9 Page

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    2SJ361

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ361
OCR Text ... -10 V PW = 30 s duty < 1 % -60 V GS V DD = -10 V -20 V -12 -80 -16 -20 2.0 -100 0 0.4 0.8 1.2 1.6 Gate Charge Qg (nc) 0.1 -0.1 -0.3 -1 Drain Current -3 I D (A) -10 6 2SJ361 Reverse Drain Current vs. Sou...
Description Silicon P-Channel MOS FET

File Size 42.04K  /  9 Page

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    2SJ386

HITACHI[Hitachi Semiconductor]
Part No. 2SJ386
OCR Text ...0.3 0.55 1.7 177 120 59 8 28 45 60 Max -- -- 10 -10 -2.5 0.4 0.8 -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns Test condit...80 Ambient Temperature 120 160 Ta (C) 4 2SJ386 Typical Capacitance vs. Drain to Source Vol...
Description Silicon P-Channel MOS FET

File Size 37.10K  /  7 Page

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