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Agilent (Hewlett-Packard)
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| Part No. |
HMMC-5200
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| OCR Text |
... in rf input power, continuous +6 dbm tj junction te mperature +150 c t op operating temperature ? 55 +85 c t st storage temperature ? 65 ...40.8 9.7 3.085 13.4 ? 15.5 0.167 112.3 19.0 ? 17.4 0.134 ? 149.6 ? 13.4 0.212 ? 43.8 9.4 2.975 3.5 ?... |
| Description |
HMMC-5200 · DC-20 GHz HBT Series-Shunt Amplifier
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| File Size |
247.24K /
6 Page |
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PHILIPS[Philips Semiconductors]
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| Part No. |
SA9500 SA9500DH
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| OCR Text |
...m Gain=10.7dB, NF=9.6dB, IIP3= +6.3dBm Gain= 7.2dB, NF=10.2dB, IIP3= +5.9dBm
* Separate, selectable IF outputs to suit FM and CDMA bandwi...40 MHz; unless specified otherwise. Appropriate external matching necessary. LIMITS PARAMETER Cellul... |
| Description |
Dual-band / CDMA/AMPS downconverter IC Dual-band, CDMA/AMPS downconverter IC
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| File Size |
140.99K /
22 Page |
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it Online |
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
MGFC45V3642A C453642A
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| OCR Text |
...t to change.
MGFC45V3642A
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V3642A is an internally impedance-...40 60 100
TYPICAL CHARACTERISTICS
P1dB,GLP vs. f 47 VDS=10V IDS=8A
P1dB
OUTPUT POWER P1dB (d... |
| Description |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应 From old datasheet system
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| File Size |
172.84K /
2 Page |
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RFMD
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| Part No. |
RFUV1003
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| OCR Text |
... 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 9 10 11 12 13 14 15 16 90 0 n/c gnd lo in gnd n/c n/c n/c v loa 1 v loa 2v mpa...40 to +85 ? c t stor -65 to +150 ? c esd human body model class 1a parameter specification unit cond... |
| Description |
12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER
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| File Size |
1,005.22K /
10 Page |
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it Online |
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