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  4ns-trr Datasheet PDF File

For 4ns-trr Found Datasheets File :: 149    Search Time::3.031ms    
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    MMBD4148

Micro Commercial Components
Part No. MMBD4148
OCR Text ... Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2% CJ 2pF .037 .950 .037 .950 www.mccsemi.com MMBD4148 Figure 1 Typical Forward Characteristics 20 10 6 4 350 2 MilliAmp...
Description 350mW 100 Volt Silicon Epitaxial Diode

File Size 65.39K  /  3 Page

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    Mitsubishi
Part No. M54610P
OCR Text ...gh-speed switching diodes (trr 4ns). (3) The capacitance CL includes stray wiring capacitance and the probe input capacitance. MITSUBISHI <CONTROL / DRIVER IC> M54610P 8-BIT PARALLEL DATA INTERFACE FOR PRINTER TIMING DIAGRAM (Ref...
Description 8-BIT PARALLEL DATA INTERFACE FOR PRINTER

File Size 187.85K  /  9 Page

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    Infineon
Part No. BAW222
OCR Text 4ns) ? very low diode capacitance ( c t < 1.5pf) ? small smd package sc75 (jedec: sot416) baw222 bav222 type package configuration marking bav222* baw222* sc75 sc75 common cathode common anode a4s a1s * pr...
Description Diodes for high speed switching applications

File Size 149.64K  /  4 Page

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    1N4148

Micro Commercial Components
Part No. 1N4148
OCR Text ...Measured at 1.0MHz, VR=4.0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2% VF 1.0V DIMENSIONS INCHES MIN ------1.000 MM MIN ------25.40 DIM A B C D MAX .166 .079 .020 --- MAX 4.2 2.00 .52 --- ...
Description 500mW 100 Volt Silicon Epitaxial Diode

File Size 56.20K  /  3 Page

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    1N914BWT

Fairchild Semiconductor
Part No. 1N914BWT
OCR Text ...0 v i rr = 1 ma, r l = 100 4ns sod-523f band indicates cathode device marking code device type device marking 1n4148wt e1 1n4448wt e2 1n914bwt e3 cathode electrical symbol anode 1n4148wt / 1n4448wt / 1n 914bw...
Description Small Signal Diode

File Size 172.30K  /  6 Page

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    MMBD914

Micro Commercial Components
Part No. MMBD914
OCR Text ... Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2% CJ 2pF .037 .950 .037 .950 www.mccsemi.com MMBD914 MCC 10,000 IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 ...
Description 350mW 100 Volt Silicon Epitaxial Diode

File Size 58.89K  /  2 Page

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    MMBD914

Shanghai Lunsure Electronic Tech
Part No. MMBD914
OCR Text ... Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2% CJ 2pF .037 .950 .037 .950 www.cnelectr.com MMBD914 IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10,000 IR,...
Description 350mW 100volts silicon epitaxial diode

File Size 42.97K  /  2 Page

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    DL4448

MCC[Micro Commercial Components]
Part No. DL4448
OCR Text ...Measured at 1.0MHz, VR=4.0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2% CJ 0.075" 0.030" www.mccsemi.com DL4448 Figure 1 Typical Forward Characteristics 200 100 60 40 500 20 MilliAmps 10 6 ...
Description 500mW 100Volt Switching Diode

File Size 230.33K  /  3 Page

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For 4ns-trr Found Datasheets File :: 149    Search Time::3.031ms    
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