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  39mh Datasheet PDF File

For 39mh Found Datasheets File :: 288    Search Time::1.375ms    
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    APT48M80B2 APT48M80L

Microsemi Corporation
Part No. APT48M80B2 APT48M80L
OCR Text ... APT48M80B2_L Typ 0.87 0.17 3 4 -10 100 500 100 0.19 5 Max Unit V V/C V mV/C A nA Min 800 Breakdown Voltage Temperature Coefficie...9mH, RG = 25, IAS = 24A. Pulse test: Pulse Width < 380s, duty cycle < 2%. Co(cr) is defined as a fix...
Description N-Channel MOSFET

File Size 178.85K  /  4 Page

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    APT44F80B2 APT44F80L

Microsemi Corporation
Part No. APT44F80B2 APT44F80L
OCR Text ...ent Drain-Source On Resistance 3 VGS = 10V, ID = 24A VGS = VDS, ID = 2.5mA VDS = 800V VGS = 0V TJ = 25C TJ = 125C Gate-Source Thresho...9mH, RG = 25, IAS = 24A. Pulse test: Pulse Width < 380s, duty cycle < 2%. Co(cr) is defined as a fix...
Description N-Channel FREDFET

File Size 324.48K  /  4 Page

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    IRFN5210

Seme LAB
Part No. IRFN5210
OCR Text 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) P-CHANNEL ...9mH , Peak IAS = -19A , VGS = -10V, RG = 25, Starting TJ = 25C 3) @ ISD -19A , di/dt -390A/s , VDD...
Description P-CHANNEL POWER MOSFET

File Size 31.61K  /  2 Page

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    TSM10N60CIC0

Taiwan Semiconductor Company, Ltd
Part No. TSM10N60CIC0
OCR Text 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)() 0.75 @ VGS =10V ID (A) 4.75 General Description The TSM10N60 N-Channel enhan...9mH, RG=25 3. Pulse test: pulse width 300uS, duty cycle 2% 4. Essentially Independent of Operating T...
Description 600V N-Channel Power MOSFET

File Size 375.06K  /  6 Page

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    BU508

Savantic, Inc.
Part No. BU508
OCR Text ... TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION...9mH LB=3H 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors ...
Description    Silicon NPN Power Transistors

File Size 133.35K  /  3 Page

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    HFP634

SemiHow Co.,Ltd.
Part No. HFP634
OCR Text ...ID = 8.1 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, ...9mH, IAS=8.1A, VDD=50V, RG=25, Starting TJ =25C 3. ISD8.1A, di/dt300A/s, VDDBVDSS , Starting TJ =25 ...
Description 250V N-Channel MOSFET

File Size 697.15K  /  8 Page

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    HFP5N60S

SemiHow Co.,Ltd.
Part No. HFP5N60S
OCR Text ...ID = 4.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, ...9mH, IAS=4.5A, VDD=50V, RG=25, Starting TJ =25C 3. ISD4.5A, di/dt200A/s, VDDBVDSS , Starting TJ =25 ...
Description 600V N-Channel MOSFET

File Size 809.82K  /  8 Page

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    HFP5N65S

SemiHow Co.,Ltd.
Part No. HFP5N65S
OCR Text ...erating Area Lower RDS(ON) : 2.3 (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 2.3 ID = 4.2 A TO-220 1 2 3 1.Gate ...9mH, IAS=4.2A, VDD=50V, RG=25, Starting TJ =25C 3. ISD4.2A, di/dt200A/s, VDDBVDSS , Starting TJ =25 ...
Description 650V N-Channel MOSFET

File Size 867.59K  /  8 Page

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    HFP644

SemiHow Co.,Ltd.
Part No. HFP644
OCR Text ... ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, ...9mH, IAS=14A, VDD=50V, RG=25, Starting TJ =25C 3. ISD14A, di/dt300A/s, VDDBVDSS , Starting TJ =25 C ...
Description 250V N-Channel MOSFET

File Size 616.91K  /  8 Page

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    HFW5N60S HFI5N60S

SemiHow Co.,Ltd.
Part No. HFW5N60S HFI5N60S
OCR Text ... HFI5N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drai...9mH, IAS=4.5A, VDD=50V, RG=25, Starting TJ =25C 3. ISD4.5A, di/dt200A/s, VDDBVDSS , Starting TJ =25 ...
Description 600V N-Channel MOSFET

File Size 820.46K  /  8 Page

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For 39mh Found Datasheets File :: 288    Search Time::1.375ms    
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