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  34m Datasheet PDF File

For 34m Found Datasheets File :: 202    Search Time::1.782ms    
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    SSF2318E

Silikron Semiconductor Co.,LTD.
Part No. SSF2318E
OCR Text ... r ds(on) < 34m ? @ v gs =1.8v r ds(on) < 26m ? @ v gs =2.5v r ds(on) < 22m ? @ v gs =4.5v esd rating 2500v hbm high power and current handing capability lead free product is acquired surface mount ...
Description Battery protection

File Size 253.72K  /  5 Page

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    ELM34803AA-N

ELM Technology Corporation
Part No. ELM34803AA-N
OCR Text ...) < 22m (vgs=-10v) ? rds(on) < 34m (vgs=-4.5v) circuit dual p-channel mosfet s 1 g1 d1 s 2 g2 d2 2 4 - elm34803aa-n electrical characteristics ta=25 c parameter symbol condition min. typ. max. unit note static parameters drain-source bre...
Description Dual P-channel MOSFET

File Size 444.42K  /  4 Page

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    Shenzhen Luguang Electronic Technology Co., Ltd
Part No. DO-213AA
OCR Text ...34d rgl 34g rgl 34j rgl 34k rgl 34m units maximum recurrent peak reverse voltage 100 200 400 600 800 1000 v maximum rms voltage 70 140 280 420 560 700 v maximum dc blocking voltage 100 200 400 600 800 1000 v maximum average forward rec...
Description Surface Mount Recti

File Size 176.46K  /  2 Page

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    ELM38800BA-S

ELM Technology Corporation
Part No. ELM38800BA-S
OCR Text ...) < 26m (vgs=2.5v) ? rds(on) < 34m (vgs=1.8v) dual n-channel mosfet s 1 d1 s 2 d2 g2 g1 4 - pin configuration circuit pin no. pin name 1 gate1 2 source1 3 source1 4 drain1 5 drain2 6 source2 7 source2 8 gate2 tssop-8(top view) 5 6 7 8 4 3...
Description Dual N-channel MOSFET

File Size 315.34K  /  4 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. IRFU4615PBF IRFR4615PBF
OCR Text ...pbf v dss 150v r ds(on) typ. 34m
Description HEXFETPower MOSFET

File Size 612.78K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD422 AOD422L
OCR Text ...m ? (v gs = 2.5v) r ds(on) < 34m ? (v gs = 1.8v) esd rating: 2000v hbm the aod422 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitab...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 196.63K  /  4 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON4421
OCR Text 34m ? symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r jl 1.6 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max c/w r ja 42 74 50 v 20 gate-source vo...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 592.35K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO9926B
OCR Text ...m ? (v gs = 4.5v) r ds(on) < 34m ? (v gs = 2.5v) r ds(on) < 52m ? (v gs = 1.8v) the ao9926b uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while ret...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 194.39K  /  4 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO9926C
OCR Text ... r ds(on) (at v gs =2.5v) < 34m ? r ds(on) (at v gs =1.8v) < 52m ? symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r jl 1.28 t a =70c junction and storage temperature range -55 to 150 c/w r ja 48 74 ...
Description 20V Dual N-Channel MOSFET

File Size 498.28K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOC2802
OCR Text 34m w r ss(on) (at v gs =4.0v) < 35m w r ss(on) (at v gs =3.1v) < 43m w r ss(on) (at v gs =2.5v) < 54m w the aoc2802 uses advanced trench technology to prov ide excellent r ss(on) , low gate charge and operation with gate voltag...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 350.78K  /  5 Page

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For 34m Found Datasheets File :: 202    Search Time::1.782ms    
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