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  3.9ghz Datasheet PDF File

For 3.9ghz Found Datasheets File :: 812    Search Time::3.016ms    
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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ...Gs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-em...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 8V dB 10V 5V...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

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    CHA5052

United Monolithic Semiconductors
Part No. CHA5052
OCR Text ..._1 Psat_2 S11 S22 IP3 Vg Vd 1,2,3 Id Id_1dBc Id_sat Parameter Operating frequency range Small signal gain (7 to 14GHz) Small signal gain (14...9GHz RFfreq=11GHz RFfreq=13GHz RFfreq=15GHz Single tone output power (dBm) IP3 versus output p...
Description 7-16GHz High Power Amplifier

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    Sanyo
Part No. 2SC4405
OCR Text ...t:mm 2059B [2SC4405] 0.425 0.3 3 0~0.1 0.15 Features * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=1.5dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4405appl...
Description NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications

File Size 111.73K  /  5 Page

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    SLM-20T SLM-20TY SLM-20T1

SIRENZA MICRODEVICES
Part No. SLM-20T SLM-20TY SLM-20T1
OCR Text ... -40 -50 -60 25C -40C 85C 0 1 2 3 4 5 6 -10 -15 -20 -25 -30 1.7 1.8 1.9 2 2.1 2.2 Freq (GHz) Freq (GHz) 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-103671 Rev D 3 S...
Description 1700-2000 MHz High Linearity Low Noise Amplifier Module

File Size 165.28K  /  5 Page

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    SPF-5122Z SPF-5122Z-EVB1

RF Micro Devices
Part No. SPF-5122Z SPF-5122Z-EVB1
OCR Text ...4.0 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Features Ultra-Low Noise Figure=0.60dB @ 900MHz Gain=18.9dB @ 900MHz High Linearity: OIP3=40.5dBm @ ...9GHz 1.96GHz 0.9GHz 1.9GHz 0.9GHz 1.9GHz 0.9GHz 1.9GHz 0.9 GHz 1.9GHz 0.9GHz 1.9GHz 0.9GHz 1.9GHz Qu...
Description 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER

File Size 402.30K  /  12 Page

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    LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS LTC4403-2EMSPBF

Linear Technology, Corp.
Part No. LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS LTC4403-2EMSPBF
OCR Text ... PCTL RF VPCA VPCB GND GND 10 2 3 4 5 850MHz/ 900MHz RF PA 50 0.4pF 0.05pF 1.8GHz / 1.9GHz RF PA U DIPLEXER 4403 TA01 U U 4403f 1 LTC4403-1/LTC4403-2 ABSOLUTE AXI U RATI GS VIN to GND ....................
Description Multiband RF Power Controllers for EDGE/TDMA; Package: MSOP; No of Pins: 10; Temperature Range: -40&deg;C to 125&deg;C SPECIALTY TELECOM CIRCUIT, PDSO10

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    LT550409 LT5504-15

Linear Technology
Part No. LT550409 LT5504-15
OCR Text ... TOP VIEW VCC RF+ RF - GND 1 2 3 4 8 7 6 5 VCC VOUT LO EN Power Supply Voltage ............................................ 5.5V VOUT, E...9GHz 2.5GHz 14 0.82 -16 to -8 -50 -45 -40 50 to 450 66 Input = -70dBm Input = -20dBm Input = 0dBm In...
Description 800MHz to 2.7GHz RF Measuring Receiver

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    BFP181

INFINEON[Infineon Technologies AG]
Part No. BFP181
OCR Text 3 For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 4 2 1 V...9GHz VCE = Parameter 24 10V dB 5V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 ...
Description NPN Silicon RF Transistor

File Size 77.16K  /  7 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183R Q62702-F1594
OCR Text ...P 183R RHs Q62702-F1594 1=E 2=C 3=E 4=B Package SOT-143R Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183W Q62702-F1503
OCR Text ...P 183W RHs Q62702-F1503 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 24 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB 10V 5V 3V...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

File Size 59.61K  /  7 Page

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For 3.9ghz Found Datasheets File :: 812    Search Time::3.016ms    
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