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FUJI[Fuji Electric]
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| Part No. |
2SK1944-01
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| OCR Text |
... = 100H
Min. 900 2,5
Typ. 3,0 10 0,2 10 2,0 6,0 1200 120 40 25 25 85 45
Max. 3,5 500 1,0 100 2,8 1800 180 60 40 40 130 70 5 20 1,4
...900V
2,8
2SK1944-01
FAP-IIA Series
Drain-Source-On-State Resistance vs. Tch Typical Transfer... |
| Description |
N-channel MOS-FET
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| File Size |
218.63K /
2 Page |
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http:// DYNEX[Dynex Semiconductor]
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| Part No. |
DIM1200FSM DIM1200FSM17-A000
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| OCR Text |
...low ESD handling procedures.
3/10
www.dynexsemi.com
DIM1200FSM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated othe...900V RG(ON) = RG(OFF) =1.8 L ~ 60nH Min. Typ. 1350 200 350 300 250 280 14 400 850 200 Max. Units ns ... |
| Description |
Single Switch IGBT Module
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| File Size |
153.37K /
10 Page |
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it Online |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQP5N90
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| OCR Text |
...* * * * 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
"
G! GDS
!"
" "
TO-220
FQP Series
!
S
Absol... |
| Description |
900V N-Channel MOSFET 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
675.06K /
8 Page |
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it Online |
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STW9NB90 6749
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| OCR Text |
...CES GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout ... |
| Description |
N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET N沟道900V - 0.85ohm - 9.7A -对MOSFET47 PowerMESH N-CHANNEL 900V - 0.85 - 9.7A - TO-247 PowerMESH TM MOSFET From old datasheet system N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET
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| File Size |
86.56K /
8 Page |
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it Online |
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http:// DYNEX[Dynex Semiconductor]
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| Part No. |
DIM1600FSM DIM1600FSM17-A000
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| OCR Text |
...low ESD handling procedures.
3/10
www.dynexsemi.com
DIM1600FSM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated othe...900V RG(ON) = RG(OFF) =1.5 L ~ 60nH Min. Typ. 1400 200 500 300 200 300 18 400 1000 200 Max. Units ns... |
| Description |
Single Switch IGBT Module
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| File Size |
145.63K /
10 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HA-2548_883 FN2472 HA-2548883
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| OCR Text |
...+ 7 V+ 6 OUT
-IN
2
+IN 3 4 V-
5 -BAL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Numb... |
| Description |
From old datasheet system Precision, High Slew Rate, Wideband Operational Amplifier
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| File Size |
55.46K /
7 Page |
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it Online |
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Price and Availability
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