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  3.900v Datasheet PDF File

For 3.900v Found Datasheets File :: 1835    Search Time::1.188ms    
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    2SK1944-01

FUJI[Fuji Electric]
Part No. 2SK1944-01
OCR Text ... = 100H Min. 900 2,5 Typ. 3,0 10 0,2 10 2,0 6,0 1200 120 40 25 25 85 45 Max. 3,5 500 1,0 100 2,8 1800 180 60 40 40 130 70 5 20 1,4 ...900V 2,8 2SK1944-01 FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Transfer...
Description N-channel MOS-FET

File Size 218.63K  /  2 Page

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DYNEX[Dynex Semiconductor]
Part No. DIM1200FSM DIM1200FSM17-A000
OCR Text ...low ESD handling procedures. 3/10 www.dynexsemi.com DIM1200FSM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated othe...900V RG(ON) = RG(OFF) =1.8 L ~ 60nH Min. Typ. 1350 200 350 300 250 280 14 400 850 200 Max. Units ns ...
Description Single Switch IGBT Module

File Size 153.37K  /  10 Page

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    FQP5N90

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP5N90
OCR Text ...* * * * 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GDS !" " " TO-220 FQP Series ! S Absol...
Description 900V N-Channel MOSFET 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 675.06K  /  8 Page

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    STF9NK90Z STP9NK90Z STW9NK90Z ST_STP9NK90Z STF9NK90 STSTP9NK90Z

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STF9NK90Z STP9NK90Z STW9NK90Z ST_STP9NK90Z STF9NK90 STSTP9NK90Z
OCR Text ...00 V 900 V 900 V RDS(on) < 1.3 < 1.3 < 1.3 ID 8A 8A 8A Pw 160 W 40 W 160 W 3 1 2 TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MA...
Description N-CHANNEL 900V - 1.1W - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 900V - 1.1W - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 900V - 1.1W - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHPower MOSFET

File Size 476.65K  /  11 Page

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    BSM75GB120DLC

Infineon Technologies AG
ETC
EUPEC[eupec GmbH]
Part No. BSM75GB120DLC
OCR Text ...= 25C Cres ICES - 0,33 3 300 - 92 400 nF A A nA IGES - prepared by: Mark Munzer approved by: M. Hierholzer date o...900V, V CEmax=VCES -LsCE *dI/dt ISC LsCE 540 40 A nH Eoff 9 mWs Eon 7,5 mWs tf 0,05 0,07 s s td,off ...
Description Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT

File Size 75.98K  /  8 Page

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    STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STW9NB90 6749
OCR Text ...CES GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout ...
Description N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET N沟道900V - 0.85ohm - 9.7A -对MOSFET47 PowerMESH
N-CHANNEL 900V - 0.85 - 9.7A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET

File Size 86.56K  /  8 Page

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DYNEX[Dynex Semiconductor]
Part No. DIM1600FSM DIM1600FSM17-A000
OCR Text ...low ESD handling procedures. 3/10 www.dynexsemi.com DIM1600FSM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated othe...900V RG(ON) = RG(OFF) =1.5 L ~ 60nH Min. Typ. 1400 200 500 300 200 300 18 400 1000 200 Max. Units ns...
Description Single Switch IGBT Module

File Size 145.63K  /  10 Page

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    FQPF4N90C FQP4N90C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF4N90C FQP4N90C
OCR Text ...d (Note 1) FQP4N90C 900 4 2.3 16 FQPF4N90C 4* 2.3 * 16 * 30 570 4 14 4.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recove...
Description    900V N-Channel MOSFET
900V N-Channel Advance Q-FET C-Series

File Size 896.19K  /  10 Page

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    INTERSIL[Intersil Corporation]
Part No. HA-2548_883 FN2472 HA-2548883
OCR Text ...+ 7 V+ 6 OUT -IN 2 +IN 3 4 V- 5 -BAL CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 Spec Numb...
Description From old datasheet system
Precision, High Slew Rate, Wideband Operational Amplifier

File Size 55.46K  /  7 Page

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For 3.900v Found Datasheets File :: 1835    Search Time::1.188ms    
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