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				VML[Vanguard International Semiconductor]
Part No.	VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text	...us Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for ...
Description	CMOS Synchronous Dynamic RAM
File Size	1,124.02K / 69 Page	View it Online	Download Datasheet

				Mitel Networks Corporation
Part No.	VP2611 VP2611CGGH1R
OCR Text	... 16X128K CIF RESOLUTION Y 352 X 288 Cr/Cb 176 x 144 TX BUFFER 32K X 8 H261 BIT STREAM 64kb to 2Mb/s CCIR601 RESOLUTION Y 720 X 288 Cr/Cb 360 x 288 Y 720 X 240 Cr/Cb 360 x 240 NTSC PAL Fig 1 : Typical Video Conferencing Transmiss...
Description	H.261 Encoder
File Size	150.33K / 14 Page	View it Online	Download Datasheet

				AMICC[AMIC Technology]
Part No.	A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29L004TX-90 A29L004UL-70 A29L004UL-90 A29L004UV-70 A29L004UV-90 A29L004UW-70 A29L004UW-90 A29L004UX-70 A29L004UX-90 A29L004V A29L004W
OCR Text	...y Flash memory organized as 524,288 bytes of 8 bits. The 8 bits of data appear on I/O0 - I/O7. The A29L004 is offered in 40-pin TSOP, 32-pin...bit, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Eras...
Description	512K X 8 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory 512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 512K X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory
File Size	367.91K / 39 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E641612C-TC50 K4E641612C-45 K4E641612C-50 K4E641612C-L K4E641612C-T K4E641612C-T45 K4E641612C-T50 K4E641612C-T60 K4E641612C-TC K4E641612C-TC45 K4E641612C-TC60 K4E641612C-TL50 K4E641612C-TL60 K4E661612C K4E661612C-45 K4E661612C-50 K4E661612C-60 K4E661612C-L K4E661612C-L45 K4E661612C-L50 K4E661612C-L60 K4E661612C-T K4E661612C-T45 K4E661612C-T50 K4E661612C-T60 K4E661612C-TC K4E661612C-TC45 K4E661612C-TC50 K4E661612C-TC60 K4E661612C-TL50 K4E661612C-TL60 K4E641612C
OCR Text	...t : mW Speed -45 -50 -60 8K 324 288 252 4K 468 432 396 * LVTTL(3.3V) compatible inputs and outputs * Early Write or output enable controlled write * JEDEC Standard pinout * Available in Plastic TSOP(II) packages * +3.3V0.3V power supply ...
Description	4M x 16bit CMOS Dynamic RAM with Extended Data Out
File Size	882.29K / 36 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text	...ynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows p...Bit A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserved Reserve...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
File Size	1,151.85K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text	...ynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows p...Bit A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserved Reserve...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
File Size	100.95K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text	...ynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows p...Bit A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserved Reserve...
Description	LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
File Size	99.80K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text	...ynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows p...Bit A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserved Reserve...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
File Size	98.65K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC50 K4S643232F-TC55 K4S643232F-TL50 K4S643232F-TL60
OCR Text	...ynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows p...Bit A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserved Reserve...
Description	IR LED 950NM 18 DEG DOUBLE END 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
File Size	100.27K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
OCR Text	...ynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows p...Bit A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserved Reserve...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
File Size	98.11K / 12 Page	View it Online	Download Datasheet

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