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  25v s Datasheet PDF File

For 25v s Found Datasheets File :: 37494    Search Time::1.75ms    
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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCs
OCR Text ...0 --- VGs = 0V 170 --- pF VDs = 25v 18 --- = 1.0MHz, see Fig. 5 source-Drain Ratings and Characteristics Is I sM VsD t rr Q rr ton ...s p-n junction diode. --- --- 2.0 V TJ = 25C, Is = 8.0A, VGs = 0V --- 490 740 ns TJ = 25C, IF = 8.0...
Description Power MOsFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOsFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOsFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130sMD
OCR Text ... = 20V VGs = -20V VGs = 0 VDs = 25v f = 1MHz VGs = 10V VDs = 0.5BVDss ID = 8A VDs = 0.5BVDss VDD = 50V ID = 8A RG = 7.5W ID = 8A ID = 5A ID ...s(W )W( VGs(th) Gate Threshold Voltage gfs IDss IGss IGss Ciss Coss Crss Qg Qgs Qgd td(on) tr td(...
Description P-Channel Power MOsFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOs场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOsFET FOR HI.REL APPLICATIONs

File Size 20.44K  /  2 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ...e Width 300s, 2% 2) @ VDD = -25v , L 2.3mH , RG = 25 , Peak IL = -18A , starting TJ = 25C 3) @ IsD -18A , di/dt -100A/s , VDD BVDss , TJ 150C , suggested RG = 9.1 semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (0145...
Description P-CHANNEL POWER MOsFET

File Size 21.26K  /  2 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...ting Temperature - VDs = -25v, VGs = 0V, f = 1MHz (Figure 11) - Internal source Inductance Ls - 13 - nH Therma...s source to Drain Diode Voltage(Note 2) Reverse Recovery Time Reverse Recovery Charge NOTEs: V...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOsFET

File Size 56.86K  /  7 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...er of source pad VGs = 0V, VDs =25v f = 1.0MHz Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- ...s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls...
Description TRANsIsTORs P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% sL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, si, POWER, MOsFET, TO-204AA

File Size 148.64K  /  7 Page

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    IRF9240 IRF9240-SMD

TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
Part No. IRF9240 IRF9240-sMD
OCR Text ...N) Max ID = -6A VGs = 0V VDs = -25v f = 1MHz VGs = -15V ID = -22A VDs = 0.8 x Max. Rating VDD = 0.5 x BVDss ID = -6A ZO = 4.7W 4 -11 0.35 6 ...s THERMAL CHARACTERIsTICs Characteristic RqJC Junction to Case RqCs RqJA TL Case to sink Junction...
Description CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOsFET

File Size 25.33K  /  2 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...Gs = 10V, see Fig. 10 15 VDD = 25v 17 ID = 1.0A ns 46 RG = 6.0, VGs = 10V 34 RD = 25 --- VGs = 0V --- pF VDs = 25v --- = 1.0MHz, see Fig....s = 2.0A, VGs = 0V TJ = 25C, I F = 2.0A di/dt = 100A/s D s Notes: Repetitive rating; ...
Description Power MOsFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520Ns
OCR Text ... --- VGs = 0V 110 --- pF VDs = -25v 70 --- = 1.0MHz, see Fig. 5 source-Drain Ratings and Characteristics Is IsM V sD t rr Q rr ton ...s --- --- -1.6 V TJ = 25C, Is = -4.0A, VGs = 0V --- 100 150 ns TJ = 25C, IF = -4.0A ___ 420 630 nC ...
Description Power MOsFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOsFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOsFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...tact --- VGs = 0V --- pF VDs = -25v --- = 1.0MHz, see Fig. 5 D s source-Drain Ratings and Characteristics Is IsM VsD trr Q rr ton Parameter Continuous source Current (Body Diode) Pulsed source Current (Body Diode) Diode F...
Description Power MOsFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOsFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ...of Operating Temperature VDs = -25v, VGs = 0V, f = 1MHz (Figure 11) Measured From the Modified MOsFET Contact screw on Tab To symbol showing...s ns ns ns ns nC nC nC pF pF pF nH Drain to source Breakdown Voltage Gate Threshold Voltage Zero ...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOsFET(6A, 100V, 0.600 惟, P娌?????MOs?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOsFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOsFET

File Size 57.36K  /  7 Page

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For 25v s Found Datasheets File :: 37494    Search Time::1.75ms    
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