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TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
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| Part No. |
D1018UK D1018
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| OCR Text |
... Operating Junction Temperature 250w 70V 20V 15A -65 to 150C 200C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 55...2.4 10 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70
Typ.
Max. Unit
V 3 1 7... |
| Description |
CAT6 SOL PC PVC WHI 20FT PVC SOLID PATCH CORD
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
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| File Size |
17.49K /
2 Page |
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DELTA[Delta Electronics, Inc.]
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| Part No. |
DPS-250wB
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| OCR Text |
...1. Total continue power output: 250w 2. The combined power on +3.3V & +5V: 105W max 3. The combined power on +3.3V, +5V & +12V1 & +12V2: 240W max
All specifications are subject to change without prior notice. DELTA ELECTRONICS, INC. 3, T... |
| Description |
80mm fan
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| File Size |
136.13K /
1 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FG2000JV-90DA
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| OCR Text |
...
VFGM = 10V
0.020
PFGM = 250w
PFG(AV) = 50W VGT = 1.5V
0.015
0.010
Tj = 25C IGT = 2.5A IFGM = 50A
0.005 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s)
10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT ... |
| Description |
HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
40.11K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FG2000JV-90DA
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| OCR Text |
...
VFGM = 10V
0.020
PFGM = 250w
PFG(AV) = 50W VGT = 1.5V
0.015
0.010
Tj = 25C IGT = 2.5A IFGM = 50A
0.005 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s)
10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT ... |
| Description |
HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
45.32K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK18SM-10
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| OCR Text |
...ARACTERISTICS (TYPICAL) 50 PD = 250w
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V
DRAIN CURRENT ID (A)
TC ...2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
52.81K /
5 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK18SM-10
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| OCR Text |
...ARACTERISTICS (TYPICAL) 50 PD = 250w
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V
DRAIN CURRENT ID (A)
TC ...2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 18 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
58.75K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK18SM-9
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| OCR Text |
...ARACTERISTICS (TYPICAL) 50 PD = 250w VGS = 20V 10V 6V 20 TC = 25C Pulse Test
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) VGS=2...2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
52.60K /
5 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK18SM-9
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| OCR Text |
...ARACTERISTICS (TYPICAL) 50 PD = 250w VGS = 20V 10V 6V 20 TC = 25C Pulse Test
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) VGS=2...2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
... |
| Description |
ER SERIES 3#12 2#4 18 A, 450 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
58.44K /
5 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM2G200US60
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| OCR Text |
...0% TC = 100 Power Dissipation = 250w 0.1 1 10 100 1000
Case Temperature, TC []
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case T...2
10
-1
10
0
10
1
Collector-Emitter Voltage, V CE [V]
Rectangular Pulse Dura... |
| Description |
IGBT
Molding Type Module
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| File Size |
699.17K /
9 Page |
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it Online |
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Price and Availability
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