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PANASONIC CORP Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SK2125
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| OCR Text |
...A IDR = 2.5A, VGS = 0 330 VDS = 20V, VGS = 0, f = 1MHz 55 20 15 25 30 55 3.125 1 500 2 3.2 1.5 -1.5 5 4 min typ max 0.1 1 Unit mA A V V S V...150V VGS=10V TC=25C
Drain to source voltage VDS (V)
VDS=150V
Gate to source voltage VGS (V)... |
| Description |
Silicon N-Channel Power F-MOS FET 2.5 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E
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| File Size |
45.73K /
3 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOTF454L
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| OCR Text |
... i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz i s...150v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 4... |
| Description |
150V N-Channel MOSFET
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| File Size |
503.01K /
6 Page |
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it Online |
Download Datasheet
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New Jersey Semiconductors
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| Part No. |
2N6438A
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| OCR Text |
...1 mhz vce = 10v, lc = 10a vce - 20v, lc = 1a notn: 1. pulse width = 25<vs; duty cycle 1%. 2. sustaining voltage. measured at a high current point where collector-emitter voltage is lowest. current pulse length si 50>s; duty cycle s 1%- volt... |
| Description |
Trans GP BJT PNP 120V 25A 3-Pin(2 Tab) TO-3
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| File Size |
98.58K /
2 Page |
View
it Online |
Download Datasheet
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