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  20v 0.25a Datasheet PDF File

For 20v 0.25a Found Datasheets File :: 2354    Search Time::1.703ms    
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    IGP10N60T07

Infineon Technologies AG
Part No. IGP10N60T07
OCR Text ...30A 25A IGP10N60T q V GE =20v 15V V GE =20v 15V 20A 15A 10A 5A 0A 0V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 12V 10...0,5V 0,0V -50C IC =20A IC, COLLECTOR CURRENT 20A IC =10A 15A 10A T J = 1 75 C 2 5C...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 351.27K  /  12 Page

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    SGW15N60 SGP15N60 SGP15N6008

Infineon Technologies AG
Part No. SGW15N60 SGP15N60 SGP15N6008
OCR Text ... IC(SC) V C E = 0 V , V G E =20v V C E =20v, I C =15A V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =15A V G E =15V PG-TO-220-3-1 PG-TO-247-3-21 V G E =15V,t S C 1 0 s V C C 60 0V, T j 150 C 2) Allowed number of short circuits: ...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 332.95K  /  12 Page

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    IKW20N60T

Infineon Technologies AG
Part No. IKW20N60T
OCR Text ...s RGint V C E = 0 V , V G E =20v V C E =20v, I C =20A Ciss Coss Crss QGate LE IC(SC) V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =20A V G E =15V T O-2 47- 3-2 1 T O-2 20- 3-1 V G E =15V,t S C 5 s V C C = 400 V, T j 150C - ...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

File Size 448.93K  /  14 Page

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    IRLR8729PBF09 IRLR8729TRLPBF

International Rectifier
Part No. IRLR8729PBF09 IRLR8729TRLPBF
OCR Text ... 24V, VGS = 0V, TJ = 125C VGS = 20v VGS = -20v VDS = 15V, ID = 20A VDS = 15V VGS = 4.5V ID = 20A See Fig. 16 nC ns VDD = 15V, VGS = 4.5Ve I...0 24 29 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 2...
Description HEXFETPower MOSFET
High Frequency Synchronous Buck Converters for Computer Processor Power

File Size 348.01K  /  11 Page

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    IRFF220

Seme LAB
Part No. IRFF220
OCR Text ...or 10 secs) 200V 3.5A 2.25A 14A 20v 20W 6.25C/W 175C/W -55 to +150C 300C Semelab Plc reserves the right to change test conditions, parame...0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk ...
Description N鈥揅HANNEL POWER MOSFET

File Size 30.66K  /  2 Page

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    SKW25N12008

Infineon Technologies AG
Part No. SKW25N12008
OCR Text ...5C T j = 150 C V C E =0V,V G E =20v V C E =20v, I C =25A 20 350 1400 100 nA S 3 2.0 1.75 4 5 A 2.5 2.5 3.1 3.7 3.6 4.3 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 40 RthJCD 1.15 RthJC 0.4 K/W Symbol Conditions Max. Value Unit ...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 324.07K  /  13 Page

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    SGW25N12009 SGW25N120

Infineon Technologies AG
Part No. SGW25N12009 SGW25N120
OCR Text ...te LE IC(SC) V C E =0V,V GE =20v V C E = 20v, I C = 25A V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 25A V G E = 1 5V - ...0 V, R G = 2 2 , 1) L = 180nH, 1) C = 4 0 pF Energy losses include "tail" and diode reverse recove...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 331.27K  /  11 Page

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    IKW25N120T2

Infineon Technologies AG
Part No. IKW25N120T2
OCR Text ...e IGES gfs V C E = 0 V , V G E =20v V C E =20v, I C =25A Power Semiconductors 2 Rev. 2.1 Sep 08 TrenchStop 2 Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emit...
Description Low Loss DuoPack : IGBT in 2nd generation TrenchStop庐 with soft, fast recovery anti-parallel EmCon diode

File Size 370.71K  /  15 Page

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    IGB10N60T

Infineon Technologies AG
Part No. IGB10N60T
OCR Text ... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 10A 6 none 40 1000 100 nA S 4.1 1.5 1.8 4.6 2.05 5.7 A 600 V Symbol Conditions Value min. typ. m...0/ 1 5V , R G = 2 3 , L 2 ) = 6 0nH , C 2 ) =40pF Energy losses include "tail" and diode reverse r...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 775.89K  /  12 Page

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    SPP1023S56RG

SYNC POWER Crop.
Part No. SPP1023S56RG
OCR Text ...inverter FEATURES P-Channel -20v/0.45A,RDS(ON)= 0.52@VGS=-4.5V -20v/0.35A,RDS(ON)= 0.70@VGS=-2.5V -20v/0.25a,RDS(ON)= 0.95@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curre...
Description Dual P-Channel Enhancement Mode MOSFET

File Size 203.31K  /  8 Page

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For 20v 0.25a Found Datasheets File :: 2354    Search Time::1.703ms    
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