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  20 25 30a Datasheet PDF File

For 20 25 30a Found Datasheets File :: 7540    Search Time::1.422ms    
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    ADPOW[Advanced Power Technology]
Part No. APT60D120SG APT60D120B APT60D120B_05 APT60D120BG APT60D120S APT60D120B05
OCR Text ...IMPEDANCE (C/W) 0.30 0.25 0.7 0.20 0.15 0.10 0.05 0 10 0.5 0.3 0.1 0.05 -5 0.9 Note: PDM t1 t2 SINGLE PULSE 10 -4 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC Z JC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURA...
Description 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 128.54K  /  4 Page

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    DSEC60-06A DSEC60-06B

IXYS Corporation
Part No. DSEC60-06A DSEC60-06B
OCR Text ... 200 400 600 800 1000 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 v fr di f /dt v 200 600 10000 400 800 0 10 20 30 40 50 100 1000 0 500 1000 1500 2000 ...25 c t vj =100 c t vj =150 c 008 ? 2000 ixys all rights reserved 3 - 3 dsec 60-06b 200 600...
Description HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
Fast Recovery Diodes

File Size 55.01K  /  3 Page

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    Infineon Technologies Corporation
Part No. SGW10N60 SGB10N60
OCR Text ... 1) ICpul s VGE EAS 42 42 20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55...+150 s W C VGE = 15V, VCC 600V, Tj 150C 1) Al...25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage...
Description Fast S-igbt in Npt-technology

File Size 302.33K  /  12 Page

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    Infineon Technologies Corporation
Part No. SGP15N120
OCR Text ...pul s VGE EAS tSC Ptot 52 52 20 85 10 198 V mJ s W VGE = 15V, 100V VCC 1200V, Tj 150C 1) Allowed number of short circuits: <100...25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage...
Description Fast S-igbt in Npt-technology

File Size 490.07K  /  12 Page

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    F3711S

International Rectifier
Part No. F3711S
OCR Text ...rage Temperature Range Max. 20 20 110 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/C C Thermal Resistance Parameter RJC ...25 C 1 10 100 10 0.1 10 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source...
Description Search --To IRF3711S

File Size 283.89K  /  11 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JFLL_03 APT10026JFLL APT10026JFLL03
OCR Text ...verse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein...25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 V GS ...
Description 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.67K  /  5 Page

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    U421 U422 U424 U425 U426 U423 XU426 XU421 XU422 XU423 XU424 XU425

Calogic LLC
CALOGIC[Calogic LLC]
CALOGIC[Calogic, LLC]
Part No. U421 U422 U424 U425 U426 U423 XU426 XU421 XU422 XU423 XU424 XU425
OCR Text ...z f = 1MHz 120 350 3.0 20 10 1.0 70 120 350 3.0 20 10 1.0 70 nV/ Hz dB VDG = 10V, ID = 30a f = 1kHz f = 10Hz f = 1kHz f = ...25 80 90 25 40 UNIT TEST CONDITIONS | VGS1-VGS2 | Differential Gate-Source Voltage | VGS1-V...
Description N-Channel Dual JFET

File Size 28.63K  /  2 Page

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    http://
A-POWER[Advanced Power Electronics Corp.]
Part No. AP75T10S AP75T10P
OCR Text ... Drain Current 1 Rating 100 20 72 45 260 138 1.11 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temper...25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=1mA 2 Min. 100 ...
Description N-CHANNEL ENHANCEMENT MODE

File Size 106.02K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT60D20LCT_05 APT60D20LCT APT60D20LCTG APT60D20LCT05
OCR Text ...MAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.15 0.10 0.05 0 0.3 0.9 0.7 0.5 Note: PDM t1 t2 Z 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC JC t 10-3 10-2 10-1 1.0 RECTANGULAR PULS...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 122.40K  /  4 Page

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    A-POWER[Advanced Power Electronics Corp.]
Part No. AP0603GMA
OCR Text ...d Drain Current 1 Rating 30 20 75 55 300 62.5 0.5 4 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Si...25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A VGS=4.5V, ID=30a V...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 57.29K  /  4 Page

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