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  2.8ghz Datasheet PDF File

For 2.8ghz Found Datasheets File :: 1203    Search Time::4.203ms    
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    Infineon
Part No. BFP280W
OCR Text ...e) at collector currents from 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900mhz vps05605 4 2 1 3 esd : e lectro s tatic d ischar...8ghz v ce = parameter 0 2 4 6 8 ma 11 i c 5 6 7 8 9 10 11 12 13 14 15 db 17 g ...
Description NPN Silicon RF Transistor for low noi...

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    Infineon
Part No. BFP280
OCR Text ...e) at collector currents from 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900 mhz vps05178 2 1 3 4 esd : e lectro s tatic d ischa...8ghz v ce = parameter 0 2 4 6 8 ma 11 i c 4 6 8 10 12 14 db 18 g 10v 2v 1v 0.7v 3v ...
Description NPN Silicon RF Transistor for low noi...

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    Inchange Semiconductor ...
Part No. BFR106
OCR Text ... low noise figure nf = 2.5 db typ. @v ce = 8 v, i c = 20 ma, f = 900 mhz high gain s 21e 2 = 10.5 db typ. @v ce = 8 v,i c ...8ghz 7.5 db s 21e 2 insertion power gain i c = 70ma ; v ce = 8v; f= 900mhz 10.5 db...
Description Low Noise Figure

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    Infineon
Part No. BFT92W
OCR Text 2 ghz at collector currents up to 20 ma complementary type: bfr 92w (npn) 1 3 vso05561 2 esd : e lectro s tatic d ischarge sensitive...8ghz v ce = parameter 0 5 10 15 20 ma 30 i c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 db 1...
Description PNP Silicon RF Transistor for broadba...

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    BFP181

INFINEON[Infineon Technologies AG]
Part No. BFP181
OCR Text ... F = 1.45 dB at 900 MHz 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181 ...8GHz VCE = Parameter 18 dB 10V 5V 3V 20 3V 14 12 G 2V G 18 2V 10 8 16 ...
Description NPN Silicon RF Transistor

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183R Q62702-F1594
OCR Text 2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...8GHz VCE = Parameter 16 dB 10V 5V dB 10V G 18 G 12 3V 2V 3V 2V 16 10 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183W Q62702-F1503
OCR Text 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...8GHz VCE = Parameter 18 dB 10V 5V 3V dB G 20 G 14 12 10V 3V 2V 18 2V 16 8 14 6 1...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

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    BFS483 Q62702-F1574 Q62702F1574

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS483 Q62702-F1574 Q62702F1574
OCR Text ...FS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Coll...8GHz VCE = Parameter 14 dB G 16 14 12 10 8 8V 5V 3V G 8V 10 5V 8 2V 3V 6 1V 2V 4 ...
Description NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system

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    BFT92 Q62702-F1062 BFT92Q62702-F1062

SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Part No. BFT92 Q62702-F1062 BFT92Q62702-F1062
OCR Text ...ion BFT 92 W1s Q62702-F1062 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emit...8GHz VCE = Parameter 8.5 10V dB 5V 3V 2V dB 10V G 12 8V 5V 3V 2V G 7.0 6.0 5.0 ...
Description PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND

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For 2.8ghz Found Datasheets File :: 1203    Search Time::4.203ms    
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