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Infineon
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| Part No. |
BFP280W
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| OCR Text |
...e) at collector currents from 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900mhz vps05605 4 2 1 3 esd : e lectro s tatic d ischar...8ghz v ce = parameter 0 2 4 6 8 ma 11 i c 5 6 7 8 9 10 11 12 13 14 15 db 17 g ... |
| Description |
NPN Silicon RF Transistor for low noi...
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| File Size |
134.23K /
7 Page |
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it Online |
Download Datasheet
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Infineon
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| Part No. |
BFP280
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| OCR Text |
...e) at collector currents from 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900 mhz vps05178 2 1 3 4 esd : e lectro s tatic d ischa...8ghz v ce = parameter 0 2 4 6 8 ma 11 i c 4 6 8 10 12 14 db 18 g 10v 2v 1v 0.7v 3v
... |
| Description |
NPN Silicon RF Transistor for low noi...
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| File Size |
133.97K /
7 Page |
View
it Online |
Download Datasheet
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Inchange Semiconductor ...
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| Part No. |
BFR106
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| OCR Text |
... low noise figure nf = 2.5 db typ. @v ce = 8 v, i c = 20 ma, f = 900 mhz high gain s 21e 2 = 10.5 db typ. @v ce = 8 v,i c ...8ghz 7.5 db s 21e 2 insertion power gain i c = 70ma ; v ce = 8v; f= 900mhz 10.5 db... |
| Description |
Low Noise Figure
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| File Size |
181.87K /
5 Page |
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it Online |
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Infineon
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| Part No. |
BFT92W
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| OCR Text |
2 ghz at collector currents up to 20 ma complementary type: bfr 92w (npn) 1 3 vso05561 2 esd : e lectro s tatic d ischarge sensitive...8ghz v ce = parameter 0 5 10 15 20 ma 30 i c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 db 1... |
| Description |
PNP Silicon RF Transistor for broadba...
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| File Size |
135.62K /
7 Page |
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it Online |
Download Datasheet
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SIEMENS[Siemens Semiconductor Group] Infineon
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| Part No. |
BFP183R Q62702-F1594
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| OCR Text |
2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...8GHz VCE = Parameter
16
dB
10V 5V
dB 10V
G
18
G
12
3V 2V
3V
2V 16
10
... |
| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) From old datasheet system
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| File Size |
58.40K /
7 Page |
View
it Online |
Download Datasheet
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SIEMENS[Siemens Semiconductor Group] Infineon
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| Part No. |
BFP183W Q62702-F1503
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| OCR Text |
2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...8GHz VCE = Parameter
18 dB 10V 5V 3V
dB
G
20
G
14 12
10V 3V 2V
18 2V 16 8 14 6 1... |
| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
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| File Size |
59.61K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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