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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLM5972-4F
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| OCR Text |
...DS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistanc...32 30 28
add
60 45 30 15
23dBm
33
21dBm
32 31 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2
16
... |
| Description |
C-Band Internally Matched FET
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| File Size |
254.77K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLM5972-8F
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| OCR Text |
...DS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current T... |
| Description |
C-Band Internally Matched FET
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| File Size |
255.52K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FMM5811GJ-1
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| OCR Text |
...
17.7 - 23.6 23.0 12 24.5 15 2.0 20 250 -7.5 -7.0 -5.0
G.C.P.: Gain Compression Point
Edition 1.1 July 2001
1
FMM5811GJ-1
17...32.9
MAG
.007 .007 .007 .006 .006 .006 .006 .006 .005 .005 .005 .005 .005 .005 .005 .004 .004 .0... |
| Description |
Amplifier. Other
17.7-23.6GHz Power Amplifier MMIC
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| File Size |
127.91K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FMM5823X
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| OCR Text |
...B Frequency Range f VDD=6.0V 21.2 27 GHz Output Power at 1dB G.C.P. P1dB IDD(DC)=700mA typ. 27.0 29.0 dBm Power Gain at 1dB G.C.P. G1dB Zs=Z...32 Drain Current at 1dB G.C.P. Iddrf (S.C.L.) 900 1500 mA Input Return Loss at Pin=-20dBm RLin -7 dB... |
| Description |
K-Band Power Amplifier MMIC
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| File Size |
419.21K /
15 Page |
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it Online |
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ICST[Integrated Circuit Systems]
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| Part No. |
M830
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| OCR Text |
... 231-1 PRBS NRZ, Mark ratio = 1:2, and TA = +25C unless otherwise specified PARAMETER Min Typ Max Units Condition
Data Rate Data Input Le...32-70912 fax: +31-43-32-70715 Micro Networks 324 Clark Street Worcester, MA 01606 tel: 508-852-5400 ... |
| Description |
12.249Gb/s OC-192 Clock & Data Recovery Transmitter Module
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| File Size |
166.40K /
6 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MAPL-000817-015CPC-072706
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| OCR Text |
...n a Production Test Fixture.
2
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015CPC
7/27/06
Preliminary
C1,C...32 32
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P... |
| Description |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
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| File Size |
195.54K /
5 Page |
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it Online |
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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
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| Part No. |
MAX9389ETJ MAX9389 MAX9389EHJ
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| OCR Text |
... a wide supply range VCC VEE of 2.375V to 5.5V. The device is offered in 32-pin TQFP and thin QFN packages, and operates over the -40C to +85C extended temperature range. o 310ps Propagation Delay o Guaranteed 2.7GHz Operating Frequency o 0... |
| Description |
Differential 8:1 ECL/PECL Multiplexer with Dual Output Buffers
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| File Size |
338.64K /
11 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0915A
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| OCR Text |
...
IM 3
P i(S C L) (dB m )
(2/48)
Mitsubishi Electric
Mar./2005
MGF0915A S PARAMETERS
freq. (MHz) 600 1000 1400 1800 2200 2600...32.93 34.72 36.22 37.37 38.13 38.46 38.33 37.72 36.59 34.92 32.68 29.84 26.34 22.15 17.18 11.37 4.61... |
| Description |
L & S BAND GaAs FET[ SMD non - matched ]
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| File Size |
1,309.44K /
48 Page |
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it Online |
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Price and Availability
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