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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
IRFN9240SMD
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| OCR Text |
...J = 25C 3) @ ISD -8A , di/dt -150a/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W
Semelab plc.
Telephone +44(0)1455 556565. Fax +4...1200 570 81 -4
V / C
W
V S(W )W(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Co... |
| Description |
P-CHANNEL POWER MOSFET
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| File Size |
23.33K /
2 Page |
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IRF[International Rectifier]
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| Part No. |
IRFN9240
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| OCR Text |
... 25 RG 200 ISD -11A, di/dt -150a/s, VDD BV DSS, TJ 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Case Outline and Dimensions -- SMD-1
All dimensions in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-11A)
POWER MOSFET N-CHANNEL(BVdss=-200V Rds(on)=0.51ohm Id=-11A)
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| File Size |
178.88K /
6 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRFY9240CM IRFY9240
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| OCR Text |
... RG 200 I SD -9.4A, di/dt -150a/s, VDD BVDSS, TJ 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Fig. 13b -- Basic Gate Charge Waveform
Case Outline and Dimensions
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1... |
| Description |
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A) 功率MOSFET P沟道（BVdss \u003d-00V，的Rds（on）\u003d 0.51ohm，身份证\u003d-输出高达9.4A
POWER MOSFET P-CHANNEL(BVdss=-200V Rds(on)=0.51ohm Id=-9.4A)
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| File Size |
232.18K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRPT1059A
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| OCR Text |
...0 Hz 10.5A rms @ nominal output 150a 0 - 230V rms 1 hp (0.75 kW) nominal full load power 150% overload for 1 minute 4.4A nominal full load p...1200
VGE, Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C ... |
| Description |
Power Module for 1 hp Motor Drives
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| File Size |
225.87K /
12 Page |
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it Online |
Download Datasheet |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MIG150Q6CMB1X
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| OCR Text |
150a 6in1)
High Power Switching Applications Motor Control Applications
* * * * * * Integrates inverter power circuits and control circuit...1200 150 150 1400 150 20 20 20 14 -20~+100 -40~+125 2500 3 Unit V V A A W C V V V mA C C V Nm
3/4... |
| Description |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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| File Size |
168.71K /
11 Page |
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it Online |
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Price and Availability
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