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  131 072-bit Datasheet PDF File

For 131 072-bit Found Datasheets File :: 1246    Search Time::0.718ms    
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    K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0B-D K9F1208U0B-V K9F1208U0B-Y K9F1208R0B
OCR Text ...48,218 bit) memory organized as 131,072 rows(pages) by 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data transfer between the I/O...
Description 64M x 8 Bit NAND Flash Memory

File Size 762.36K  /  45 Page

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    K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0
OCR Text ... Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 250s and an erase operation can be per...
Description 512K x 8 bit NAND Flash Memory
4M x 8 Bit NAND Flash Memory

File Size 555.63K  /  27 Page

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    62LV12816 IS62LV12816L-70TI IS62LV12816L-100B IS62LV12816L-100BI IS62LV12816L-100T IS62LV12816L-100TI IS62LV12816L-120B

Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
Part No. 62LV12816 IS62LV12816L-70TI IS62LV12816L-100B IS62LV12816L-100BI IS62LV12816L-100T IS62LV12816L-100TI IS62LV12816L-120B IS62LV12816L-120BI IS62LV12816L-120T IS62LV12816L-120TI IS62LV12816L-70B IS62LV12816L-70BI IS62LV12816L-70T
OCR Text ...152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power ...
Description 128K x 16 CMOS STATIC RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44

File Size 80.13K  /  9 Page

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    BS616LV2025 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI

BSI[Brilliance Semiconductor]
Part No. BS616LV2025 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI
OCR Text ...ndom Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

File Size 250.57K  /  11 Page

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    LH532600 LH532600N LH532600D LH532600T LH532600TR

SHARP[Sharp Electrionic Components]
Sharp Corporation
Part No. LH532600 LH532600N LH532600D LH532600T LH532600TR
OCR Text 131,072 words x 16 bit organization (Word mode) * Access time: 100 ns (MAX.) * Static operation * TTL compatible I/O * Three-state outputs * Single +5 V power supply * Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 W (MAX.) * Ma...
Description CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
CMOS 2M (256K x 8/128K x 16) MROM

File Size 70.32K  /  8 Page

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    LRS1341 LRS1342

SHARP[Sharp Electrionic Components]
Part No. LRS1341 LRS1342
OCR Text ...8,576 x 16-bit flash memory and 131,072 x 16-bit static RAM in one package. PIN CONFIGURATION 72-BALL FBGA INDEX TOP VIEW 1 A B C D E F G H NC NC 2 NC 3 NC A16 F-WE 4 A11 A8 F-RY/ BY 5 A15 A10 T1 T2 6 A14 A9 T3 T4 ...
Description Stacked Chip 16M Flash Memory and 2M SRAM

File Size 195.04K  /  24 Page

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    MSM518122

OKI[OKI electronic componets]
Part No. MSM518122
OCR Text 131,072-Word 8-Bit Multiport DRAM This version: Jan. 1998 MSM518122 Previous version: Dec. 1996 DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. ...
Description 131,072-Word x 8-Bit Multiport DRAM

File Size 618.32K  /  45 Page

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    NM27C128 NM27C128Q200 NM27C128Q250 NM27C128Q150

FAIRCHILD[Fairchild Semiconductor]
Part No. NM27C128 NM27C128Q200 NM27C128Q250 NM27C128Q150
OCR Text 131,072-bit (16K x 8) High Performance CMOS EPROM July 1998 NM27C128 131,072-bit (16K x 8) High Performance CMOS EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memor...
Description 131 /072-bit (16K x 8) High Performance CMOS EPROM
131,072-bit (16K x 8) High Performance CMOS EPROM

File Size 112.31K  /  11 Page

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    A29010 A29010-55 A29010-70 A29010-90 A29010L-55 A29010L-70 A29010L-90 A29010V-55 A29010V-70 A29010V-90

AMICC[AMIC Technology]
Part No. A29010 A29010-55 A29010-70 A29010-90 A29010L-55 A29010L-70 A29010L-90 A29010V-55 A29010V-70 A29010V-90
OCR Text ...-only Flash memory organized as 131,072 bytes of 8 bits each. The 128 Kbytes of data are further divided into four sectors for flexible sector erase capability. The 8 bits of data appear on I/O0 - I/O7 while the addresses are input on A0 to...
Description 128K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
128K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

File Size 286.17K  /  30 Page

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    AM29F010B70EC AM29F010B70EE AM29F010B70EI AM29F010B70FC AM29F010B70FE AM29F010B70FI AM29F010B70JC AM29F010B70JE AM29F010

Advanced Micro Devices
ETC
SPANSION[SPANSION]
Part No. AM29F010B70EC AM29F010B70EE AM29F010B70EI AM29F010B70FC AM29F010B70FE AM29F010B70FI AM29F010B70JC AM29F010B70JE AM29F010B70JI AM29F010B70PC AM29F010B70PE AM29F010B70PI AM29F010B
OCR Text ...-only Flash memory organized as 131,072 bytes. The Am29F010B is offered in 32-pin PDIP, PLCC and TSOP packages. The byte-wide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC s...
Description 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

File Size 615.25K  /  35 Page

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