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INTERSIL[Intersil Corporation]
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| Part No. |
HCS21MS HCS21KMSR HCS21K HCS21HMSR HCS21DMSR HCS21D FN3052
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| OCR Text |
...* Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
* Latch-Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * D... |
| Description |
From old datasheet system Radiation Hardened Dual 4-Input AND Gate
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| File Size |
183.62K /
8 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
HCS02HMSR FN2433 HCS02MS HCS02D HCS02DMSR HCS02K HCS02KMSR
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| OCR Text |
...* Dose Rate Survivability: >1 x 1012 Rads (Si)/s * Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse * Latch-Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operat... |
| Description |
NOR-Gate, 2-Input, Quad, Rad-Hard, High-Speed, CMOS, Logic Radiation Hardened Quad 2-Input NOR Gate 辐射加固输入或非 From old datasheet system
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| File Size |
143.79K /
8 Page |
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it Online |
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AEROFLEX[Aeroflex Circuit Technology]
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| Part No. |
5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q512K32-SWC 9Q512K32 UT9Q512K32 UT9Q512K32-SPC 5962D0151101QXC 5962D0151101TXC 5962L0151101TXC 5962L0151101QXC 5962P0151101QXC 5962P0151101TXC
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| OCR Text |
...3. Test per MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS SYMBOL VDD TC VIN PARAMETER Positive supply voltage Case temperature range DC input voltage LIMITS 4.5 to 5.5V -40 to +125C 0V to V DD
4
DC ELECTRICAL CHARACTER... |
| Description |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). UT9Q512K32 16Megabit SRAM MCM UT9Q512K32 16Megabit SRAM MCM 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
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| File Size |
135.00K /
14 Page |
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HARRIS SEMICONDUCTOR Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
ACTS541D ACTS541HMSR FN4094 ACTS541MS 5962F9672601VRC 5962F9672601VXC ACTS541K
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| OCR Text |
...vability . . . . . . . . . . . >1012 RAD (Si)/s, 20ns Pulse * Latch-Up Free Under Any Conditions * Military Temperature Range . . . . . . . . . . . . . . . . . . -55oC to +125oC * Significant Power Reduction Compared to ALSTTL Logic * DC Op... |
| Description |
Radiation Hardened Octal Three-State Buffer/Line Driver 辐射加固八路三态缓冲器/线路驱动 From old datasheet system
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| File Size |
65.37K /
3 Page |
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it Online |
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