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IXYS Corporation
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| Part No. |
IXFR180N085
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| OCR Text |
... PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25C to 150C TJ = 25C to 1...931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
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| File Size |
33.36K /
2 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
BB505CES BB505C
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| OCR Text |
1.00 Jun.14.2004
Features
* * * * Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at ...931 0.924 0.916 0.909 S22 ANG -1.8 -3.1 -5.2 -6.5 -8.2 -12.9 -15.1 -17.3 -19.5 -21.8 -24.0 -26.1 -28... |
| Description |
Transistors>Amplifiers/MOSFETs
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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| File Size |
102.90K /
9 Page |
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it Online |
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http://
IXYS Corporation
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| Part No. |
IXGP12N60B IXGA12N60B
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| OCR Text |
1 V = 120 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25...931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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| Description |
HiPerFAST IGBT
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| File Size |
69.92K /
2 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN21A180IV
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| OCR Text |
...2mA IGS=- 36 mA VDS=50V IDS(DC)=1.0A Pout=45dBm(Avg.) Note 1 Channel to Case -1.0 14.0 -
r P
Symbol
VDS IGF IGR Tch
im l e
Condit...931 175.2 0.933 173.8 0.925 172.4 0.916 169.3 0.872 162.4 0.859 161.8 0.848 160.6 0.829 160.0 0.814 ... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
230.17K /
4 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXTA2N80 IXTP2N80
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| OCR Text |
...to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM
Maximum Ratings 800 800 20 30 2 8 ...931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
HIGH VOLTAGE MOSFET
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| File Size |
45.64K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IRFP264
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| OCR Text |
...to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C IS IDM, di/dt 100 A/s, VDD...931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
Standard Power MOSFET - N-Channel Enhancement Mode
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| File Size |
46.15K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFJ13N50
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| OCR Text |
...to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 10...931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFJ 13N50
25
TJ = 25C VGS=10V 8V 7V 6V
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| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
67.23K /
4 Page |
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it Online |
Download Datasheet |
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ETC
IXYS[IXYS Corporation]
http://
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| Part No. |
IXFN120N20
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| OCR Text |
... TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions T J = 25C to ...931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
HiPer FET Power MOSFETs
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| File Size |
68.95K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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