| |
|
 |

Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
| Part No. |
K7R161882B K7R163682B K7R160982B
|
| OCR Text |
...evision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undersho...5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,... |
| Description |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
|
| File Size |
425.70K /
19 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
| Part No. |
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30 K7R320982M
|
| OCR Text |
...evision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undersho...5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,... |
| Description |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
| File Size |
415.94K /
18 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Galvantech
|
| Part No. |
GVT71256D18 71256D18
|
| OCR Text |
...7MHz Provide high performance 3-1-1-1 access rate Fast OE# access times: 3.5ns and 3.8ns Optimal for depth expansion (one cycle chip deselec...5H, 3K, 5K, 3L, 3M, 5M, 3N, 5N, 3P, 5P 1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U 74, 24 15, 41,65, 91 1... |
| Description |
256K X 18 SYNCHRONOUS BURST SRAM From old datasheet system
|
| File Size |
173.28K /
14 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|