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				Integrated Device Techn... IDT[Integrated Device Technology]
Part No.	IDT71V016S15PH IDT71V016S15PHI IDT71V016S15Y IDT71V016S15YI IDT71V016S20PH IDT71V016S20PHI IDT71V016S20Y IDT71V016S20YI IDT71V016
OCR Text	1 Meg (64K x 16-Bit) Features IDT71V016 Description The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT's high-perfomance, high-reliability CMOS technology. This state-of-the-...
Description	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
File Size	77.83K / 9 Page	View it Online	Download Datasheet

				Integrated Device Technology, Inc. IDT[Integrated Device Technology] Integrated Device Techn...
Part No.	IDT71V016 IDT71V016SA IDT71V016SA10BF8 IDT71V016SA10BFI8 IDT71V016SA10PH8 IDT71V016SA10PHI8 IDT71V016SA10Y8 IDT71V016SA10YI8 IDT71V016SA12BF8 IDT71V016SA12BFI8 IDT71V016SA12PH8 IDT71V016SA12PHI8 IDT71V016SA12Y8 IDT71V016SA12YI8 IDT71V016SA15BF8 IDT71V016SA15BFI8 IDT71V016SA15PH8 IDT71V016SA15PHI8 IDT71V016SA15Y8 IDT71V016SA15YI8 IDT71V016SA20BFI8 IDT71V016SA20PH8 IDT71V016SA20PHI8 IDT71V016SA20Y8 IDT71V016SA20YI8 IDT71V016SA20BF8 71V016SA IDT71V016SA12YGI
OCR Text	1 Meg (64K x 16-Bit) Features x x IDT71V016SA Description The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT's high-perfomance, high-reliability CMOS technology. This state-of-t...
Description	3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PBGA48 High-Performance Current-Mode PWM Controller 14-SOIC -40 to 85 64K X 16 STANDARD SRAM, 10 ns, PDSO44 64K X 16 STANDARD SRAM, 12 ns, PDSO44 0.400 INCH, PLASTIC, SOJ-44 TOOLS,SCREWDRIVERS,TORX,BALLDRIVER T-HANDLE SET,10-PC.INCH SIZES 3/32-3/8" AND STAND,HAND TOOLS,BALLDRIVER® T-HANDLE SETS ,BONDHUS 3.3V 64K x 16 Static RAM
File Size	99.59K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D263238A-GC40 K4D263238A-GC45 K4D263238A-GC50
OCR Text	...ecification without notice. -1- Rev. 2.0 (Jan. 2003) K4D263238A-GC Revision History Revision 2.0 (January 16, 2002) * Changed pa...048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous fe...
Description	DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
File Size	295.84K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40 K4D263238E-GC45
OCR Text	...DLL (144-Ball FBGA) Revision 1.7 November 2003 Samsung Electronics reserves the right to change products or specification without noti...048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous fe...
Description	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
File Size	308.67K / 17 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
Part No.	K4D263238F K4D263238F-QC40 K4D263238F-QC50
OCR Text	...Data Strobe and DLL Revision 1.1 May 2003 -1- Rev 1.1 (May 2003) K4D263238F Revision History Revision 1.1 (May 30, 2003) * Ad...048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous fea...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
File Size	235.10K / 17 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D263238G-GC36
OCR Text	...DLL (144-Ball FBGA) Revision 1.4 November 2004 Samsung Electronics reserves the right to change products or specification without noti...048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous fe...
Description	128Mbit GDDR SDRAM
File Size	322.51K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text	...Data Strobe and DLL Revision 1.3 August 2001 Samsung Electronics reserves the right to change products or specification without notice...048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous fea...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	280.12K / 19 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC
OCR Text	...ecification without notice. -1- Rev. 2.0 (Jan. 2003) * VDD / VDDQ=2.8V * K4D26323RA-GC Revision History Revision 2.0 (January ...048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous fe...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	300.83K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text	1 (May 1998) - ICC2N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised....048,576 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous de...
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
File Size	124.02K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	M48Z128 M48Z128-120CS1 M48Z128-120PM1 M48Z128-70CS1 M48Z128-70PM1 M48Z128-85CS1 M48Z128-85PM1 M48Z128CS M48Z128PM M48Z128SH M48Z128Y M48Z128Y-120CS1 M48Z128Y-120PM1 M48Z128Y-70CS1 M48Z128Y-70PM1 M48Z128Y-85CS1 M48Z128Y-85PM1 M48Z128YCS M48Z128YPM M48Z128YSH -M48Z128Y-70PM1 -M48Z128-120CS1 -M48Z128Y-85PM1
OCR Text	1 Mbit (128Kb x8) ZEROPOWER(R) SRAM s INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNL...048,576 locations in the static storage array. Thus, the unique address specified by the 17 Address ...
Description	1 Mbit 128Kb x8 ZEROPOWER SRAM 1兆位的SRAM 128KB的x8 ZEROPOWER 1 Mbit (128Kb x8) ZEROPOWER SRAM
File Size	104.63K / 17 Page	View it Online	Download Datasheet

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