0.3a 50v pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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0.3a 50v Datasheet PDF File

For 0.3a 50v Found Datasheets File :: 3304 Search Time::1.641ms
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				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HTIP127
OCR Text	... PF Test Conditions IC=-1mA, IE=0 IC=-100mA, IB=0 VCB=-100V VCE=-50v VEB=-5V IC=-3A, IB=-12mA IC=-5A, IB=-20mA IC=-3A, VCE=-3V IC=-500mA, VCE=-3V IC=-3A, VCE=-3V VCB=-10V, f=0.1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Darlington...
Description	PNP EPITAXIAL PLANAR TRANSISTOR
File Size	40.37K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
Part No.	KA1L0365R KA1L0365R-TU KA1L0365R-YDTU 1M0365R KA1M0365 KA1M0365R KA1M0365R-TU KA1M0365R-YDTU KA1H0365R-TU KA1H0365 KA1H0365R-YDTU
OCR Text	...R VOLTAGE S/D 1mA - + S R L.E.B 0.1V S R Q #1 GND Q Internal bias #2 DRAIN SFET Power on reset Rev.1.0.2 (c)2003 Fairchild Semiconduc...3A 650v, 3A 650v, 3A Fosc 50kHz 67kHz 100kHz DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE R...
Description	Fairchild Power Switch(FPS) Fairchild Power Switch(FPS) 飞兆半导体功率开关（FPS
File Size	87.77K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	SMP100MC SMP100MC-120 SMP100MC-140 SMP100MC-160 SMP100MC-200 SMP100MC-230 SMP100MC-270 -SMP100MC-200
OCR Text	...al resistor to meet standard () 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 2...3A 1.1s (first level), Tamb = 25C Test result: Fuse and Trisil OK after test in accordance with GR10...
Description	TRISIL?/a> FOR TELECOM EQUIPMENT PROTECTION TELECOM EQUIPMENT PROTECTION: TRISIL TRISIL FOR TELECOM EQUIPMENT PROTECTION TRISIL⑩ FOR TELECOM EQUIPMENT PROTECTION TRISILFOR TELECOM EQUIPMENT PROTECTION ⑩的TRISIL用于电信设备保护
File Size	107.32K / 10 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	STA301A
OCR Text	...VCEO hFE VCE(sat) ton tstg tf 1.0 4.0 1.5 50 1000 2.0 V 60 Specification min typ max 100 10 70 Unit (Ta=25C) Unit V V V A A W C C Conditions VCB=50v VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCC 30V, IC=3A, IB1=-IB2=10mA A mA...
Description	NPN Darlington With built-in avalanche diode
File Size	20.31K / 1 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	STA302A STA302
OCR Text	...O VCEO hFE VCE(sat) ton tstg tf 0.4 0.8 0.6 -50 1000 -2.0 V Specification min typ max -100 -10 Unit Unit V V V A A W C C Conditions VCB=-50v VEB=-6V IC=-10mA VCE=-4V, IC=-3A IC=-3A, IB=-10mA VCC -30V, IC=-3A, IB1=-IB2=-10mA A mA V...
Description	PNP Darlington General purpose/3-phase motor drive
File Size	20.19K / 1 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	TIP127 TIP126 TIP125 TIP127TU
OCR Text	...orage Temperature R1 8k R2 0.12k Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emit...3A IC = -3A, IB = -12mA IC=-5A, IB=-20mA VCE = -3V, IC = -3A VCB = -10V, IE = 0, f = 0.1MHz 1000 100...
Description	PNP Epitaxial Darlington Transistor Medium Power Linear Switching Applications
File Size	44.74K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VB027BSP VB027BSP13TR 5302
OCR Text	...A IC=6A; VIN=4V; -40CTj125C VIN=0.4V VIN=4V; IC=6A; -40CTj125C 4.5 VIN=4V See figure 3 Vc=125V 4 0 100 5.5 0.8 200 Vd 0.5 4.25 See figure 4 5.45 See figure 5 2 IC=6A IC=6A 5 2 300 130 150 30 3 170 2.6 25 8 3.2 45 15 A s s mJ C C V 5.8 6.15 ...
Description	From old datasheet system HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
File Size	60.99K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU508AF
OCR Text	...rent Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 34 1.0 UNIT V V A A W V A s Ths 25 C IC = 4.5 A; IB = 1.6 A f = 16 k...3A 0.8 0.6 0 0 1 2 3 20 40 60 IB / A 4 80 Ths / C 100 120 140 F...
Description	Silicon Diffused Power Transistor
File Size	60.40K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU508AW
OCR Text	...rent Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 125 1.0 UNIT V V A A W V A s Tmb 25 C IC = 4.5 A; IB = 1.6 A f = 16 ...3A -VBB 0.6 0 1 2 3 IB / A 4 Fig.5. Switching times test circuit. Fig.8. Typical bas...
Description	Silicon Diffused Power Transistor
File Size	72.17K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BU508AX
OCR Text	...rent Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 45 1.0 UNIT V V A A W V A s Ths 25 C IC = 4.5 A; IB = 1.6 A f = 16 k...3A 0.8 0.6 0 0 1 2 3 20 40 60 IB / A 4 80 Ths / C 100 120 140 F...
Description	Silicon Diffused Power Transistor 8 A, 700 V, NPN, Si, POWER TRANSISTOR
File Size	62.63K / 7 Page	View it Online	Download Datasheet

For 0.3a 50v Found Datasheets File :: 3304 Search Time::1.641ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |