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TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
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| Part No. |
D1018UK D1018
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| OCR Text |
...M N O P Q mm 9.14 12.70 45 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 SOURCE (CO...250W 70V 20V 15A -65 to 150C 200C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (0... |
| Description |
CAT6 SOL PC PVC WHI 20FT PVC SOLID PATCH CORD
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
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| File Size |
17.49K /
2 Page |
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DELTA[Delta Electronics, Inc.]
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| Part No. |
DPS-250WB
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| OCR Text |
...e Time <20mS * Leakage Current <0.75mA @ 240Vac * Overvoltage Protection: +3.3V, +5V, +12V * Overcurrent Protection: <240VA * Short-Circuit ...250W 2. The combined power on +3.3V & +5V: 105W max 3. The combined power on +3.3V, +5V & +12V1 & +1... |
| Description |
80mm fan
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| File Size |
136.13K /
1 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FG2000JV-90DA
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| OCR Text |
...RY CATHODE CONNECTOR (RED) 63 0.5 0.4 min 3.5 0.2 DEPTH 2.2 0.2 CATHODE TYPE NAME
ITQRM Repetitive controllable on-state current ......250W
PFG(AV) = 50W VGT = 1.5V
0.015
0.010
Tj = 25C IGT = 2.5A IFGM = 50A
0.005 0 10-3... |
| Description |
HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
40.11K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FG2000JV-90DA
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| OCR Text |
...RY CATHODE CONNECTOR (RED) 63 0.5 0.4 min 3.5 0.2 DEPTH 2.2 0.2 CATHODE TYPE NAME
ITQRM Repetitive controllable on-state current ......250W
PFG(AV) = 50W VGT = 1.5V
0.015
0.010
Tj = 25C IGT = 2.5A IFGM = 50A
0.005 0 10-3... |
| Description |
HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
45.32K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK18SM-10
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| OCR Text |
...4.5 1.5
r
2
2
4
20.0
3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r D...250W
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V
DRAIN CURRENT ID (A... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
52.81K /
5 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK18SM-10
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| OCR Text |
...4.5 1.5
r
2
2
4
20.0
3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r D...250W
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V
DRAIN CURRENT ID (A... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 18 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
58.75K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK18SM-9
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| OCR Text |
...4.5 1.5
r
2
2
4
20.0
3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r D...250W VGS = 20V 10V 6V 20 TC = 25C Pulse Test
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICA... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
52.60K /
5 Page |
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it Online |
Download Datasheet |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK18SM-9
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| OCR Text |
...4.5 1.5
r
2
2
4
20.0
3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r D...250W VGS = 20V 10V 6V 20 TC = 25C Pulse Test
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICA... |
| Description |
ER SERIES 3#12 2#4 18 A, 450 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
58.44K /
5 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM2G200US60
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| OCR Text |
... -40 to +150 -40 to +125 2500 2.0 2.5
Units V V A A A A us W C C V N.m N.m
Notes : (1) Repetitive rating : Pulse width limited by max....250W 0.1 1 10 100 1000
Case Temperature, TC []
Frequency [Khz]
Fig 3. Saturation Voltage vs... |
| Description |
IGBT
Molding Type Module
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| File Size |
699.17K /
9 Page |
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it Online |
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Price and Availability
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