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  0.25-4.25v Datasheet PDF File

For 0.25-4.25v Found Datasheets File :: 47017    Search Time::5.109ms    
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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text 0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 1 2 ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...l D VDSS = -55V RDS(on) = 0.02 G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...25/97 IRF4905S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter D...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... VDSS = -55V G S RDS(on) = 0.02 ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...25/97 IRF4905 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 I...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...d D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 I...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ....) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530A BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. So...25 C) Value 100 14 9.9 1 O Units V A A V mJ A mJ V/ns W W/ C Continuous Drain Curren...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDSS =100V G S RDS(on) = 0.11 ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...25 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.11 VGS = 10...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...l VDSS 500V RDS(on) max 0.85 ID 8.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanc...25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...l VDSS 500V Rds(on) max 0.85 ID 8.0A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C ID...25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dy...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... VDSS = 500V G S RDS(on) = 0.85 ID = 8.0A Description This new series of low charge HEXFET(R) power MOSFETs achieve significant low...25 27 19 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.85 VG...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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