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  0.0209 Datasheet PDF File

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    2SC3214 2SC3214-15

Quanzhou Jinmei Electro...
Quanzhou Jinmei Electronic Co.,Ltd.
Part No. 2SC3214 2SC3214-15
OCR Text ...nction to mounting base VALUE 1.0 UNIT ae /W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3214 SYMBOL TYP. MAX UNIT V(B...
Description    Silicon NPN Power Transistors

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    2SC3480

Inchange Semiconductor Company Limited
Part No. 2SC3480
OCR Text ...eakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Sat...
Description Silicon NPN Power Transistor

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    2SC3481

Inchange Semiconductor Company Limited
Part No. 2SC3481
OCR Text ...eakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Satu...
Description Silicon NPN Power Transistor

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    2SC3482

Inchange Semiconductor Company Limited
Part No. 2SC3482
OCR Text ...eakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Sa...
Description Silicon NPN Power Transistor

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    2SC3884

Inchange Semiconductor Company Limited
Part No. 2SC3884
OCR Text ...eakdown Voltage IC= 5mA; IB= 0 B 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.5 V ICBO Collector Cutof...
Description Silicon NPN Power Transistor

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    2SC4738

Weitron Technology
Part No. 2SC4738
OCR Text ...output capacitance IC =100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=60V, IE=0 VEB=5V, IC =0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob MIN 60 50 5 120 ...
Description NPN TRANSISTOR

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    2SC5626

Isahaya Electronics Corporation
Part No. 2SC5626
OCR Text ...pplication. OUTLINE DRAWING 2.1 0.425 1.25 0.425 Unit:mm FEATURE Super mini package f or easy mounting High gain band width product 2.0 1.30 0.65 0.65 1 0.3 2 3 APPLICATION Small ty pe machine high f requency amplif y a...
Description TRANSISTOR

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    2SD2340

Savantic, Inc.
Part No. 2SD2340
OCR Text ...requency CONDITIONS IC=30mA ;IB=0 IC=5A ;IB=5mA IC=5A ;IB=5mA VCB=130V; IE=0 VCE=110V IB=0 VEB=5V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=10V 5000 MIN 110 2SD2340 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE fT TYP. MAX UNIT V...
Description Silicon NPN Power Transistors

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    2SD2348

Inchange Semiconductor Company Limited
Part No. 2SD2348
OCR Text ...l time CONDITIONS IE=300mA , IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A 83 10 6 1 3 MIN 5 2SD2348 TYP. MAX UNIT V 5.0 1.5 1 250 ...
Description Silicon NPN Power Transistors

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    2SD2348

Savantic, Inc.
Part No. 2SD2348
OCR Text ...l time CONDITIONS IE=300mA , IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A 83 10 6 1 MIN 5 2SD2348 SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO h...
Description Silicon NPN Power Transistors

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