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  0.0039 Datasheet PDF File

For 0.0039 Found Datasheets File :: 4536    Search Time::2.219ms    
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    Sanyo
Part No. 2SD1683 2SB1143 2SD1682R
OCR Text ...hFE1 hFE2 fT Cob VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)100mA VCE=(-)2V, IC=(-)3A VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz 100* 40 150 (39)25 MHz pF Conditions Ratings min typ max (-)1 (-)1 560* Unit A A * ; The 2SB1143/2SD16...
Description TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2.5A I(C) | TO-126
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 50V/4A Switching Applications
PNP Epitaxial Planar Silicon Transistors 50V/4A Switching Applications

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    Sanyo
Part No. 2SD1685
OCR Text ...ns unit:mm 2042B [2SD1685] 8.0 1.0 4.0 1.0 * Low saturation voltage. * Large current capacity. * Fast switching time. * No insulator required when mounting because the leadframe of the chip is covered with plastic. 1.4 Features ...
Description NPN Epitaxial Planar Silicon Transistor 20V/5A Switching Applications
NPN Epitaxial Planar Silicon Transistors

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    Sanyo
Part No. 2SD1722 2SB1165
OCR Text ...hFE1 hFE2 fT Cob VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)0.5A VCE=(-)2V, IC=(-)4A VCE=(-)5V, IC=(-)1A VCB=(-)10V, f=1MHz 70 Q 140 100 R 200 140 S 280 Conditions Ratings min typ max (-)1 (-)1 70* 35 180 (130) 40(60) 200 T 4...
Description NPN Epitaxial Planar Silicon Transistors 50V/5A Switching Applications
PNP Epitaxial Planar Silicon Transistors 50V/5A Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

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    hitachi
Part No. 2SD2115
OCR Text ... -- -- -- -- Max -- -- -- 10 -- 0.8 1.3 0.6 V V s Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1.5 A*1 I C = 1.5 A, IB = 0.05 A*1 I C = 1.5 A, IB = 0.05 A*1 I C =...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 28.35K  /  4 Page

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    Matsshita / Panasonic
Part No. 2SD2225
OCR Text 0.15 Unit: mm 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. Allowin...
Description From old datasheet system
Transistor

File Size 48.06K  /  3 Page

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    Matsshita / Panasonic
Part No. 2SD2544 2SD2544P
OCR Text ... 1.20.1 1.480.2 90 C 1.0 2.250.2 I Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation ...
Description TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | SIP
Power Transistors

File Size 62.70K  /  4 Page

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    Sanyo
Part No. 2SD330 2SB514
OCR Text ... fT VCE(sat) VBE VCB=(-)20V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)1A VCE=(-)2V, IC=(-)0.1A VCE=(-)5V, IC=(-)0.5A IC=(-)2A, IB=(-)0.2A IC=(-)1A, VCE=-(-)5V 40* 35 8 (-)1.0 (-)1.5 MHz V V Conditions Ratings min typ max (-)0.1 (-)1.0 320* Uni...
Description NPN Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications
PNP/NPN Triple Diffused Planar Silicon Transistors

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    hitachi
Part No. 2SD669
OCR Text ...est conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0,...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 40.60K  /  7 Page

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    hitachi
Part No. 2SD768
OCR Text ...yp -- -- -- -- -- -- -- -- -- 1.0 3.0 Max -- -- 100 10 20000 1.5 3 2 3.5 -- -- V V V V s s Unit V V A A Test conditions I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 m...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 33.48K  /  5 Page

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    Matsshita / Panasonic
Part No. 2SD965 2SD965R 2SD965Q 2SD0965Q 2SD0965R
OCR Text ... (Ta=25C) Ratings 40 20 7 8 5 0.75 150 -55 ~ +150 Unit V V V A A W C C 2.540.15 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the ...
Description Low-Power, SC70/SOT &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 20V的五(巴西)总裁| 5A条一(c)|2
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92

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