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5507254 COMPO MAX777MJ PL5209M3 ASB0340 MCP73861 2Y4NANV B300003
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  0.000001 Datasheet PDF File

For 0.000001 Found Datasheets File :: 1459    Search Time::1.719ms    
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    NGTB25N120FL2WG

ON Semiconductor
Part No. NGTB25N120FL2WG
OCR Text ...voltage (t pulse = 5 s, d < 0.10) v ge 20 30 v power dissipation @ t c = 25 c @ t c = 100 c p d 385 192 w short circuit withs...000001 0.002017 0.000965 0.013782 0.001409 0.001568 0.010366 0.002294 0.070949 0.048322 0.244018 0.0...
Description IGBT - Field Stop II

File Size 144.19K  /  10 Page

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    AO4476A

Alpha & Omega Semiconductors
Part No. AO4476A
OCR Text ...ation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c maximum junction-to-lead c/w c/w maximum ...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: s...
Description 30V N-Channel MOSFET

File Size 362.55K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4476A
OCR Text ...ation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c maximum junction-to-lead c/w c/w maximum ...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: s...
Description 30V N-Channel MOSFET

File Size 449.49K  /  6 Page

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    NGTB30N60SWG

ON Semiconductor
Part No. NGTB30N60SWG
OCR Text 0 1 publication order number: ngtb30n60sw/d ngtb30n60swg igbt this insulated gate bipolar transistor (igbt) features a robust and cost eff...000001 0.175067 0.060092 0.270047 0.108471 0.001806 0.016641 0.011710 0.092191 0.002714 11.650732 fi...
Description IGBT

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    MX29LV033MTTI-90G

Macronix International
Part No. MX29LV033MTTI-90G
OCR Text ...time: 25ns - sector erase time: 0.5s (typ.) - 4 word/8 byte page read buffer - 16 word/ 32 byte write buffer: reduces programming time for m...000001 64/32 010000-1ffff 008000-0ffff sa2 000010 64/32 020000-2ffff 010000-17fff sa3 000011 64/32 0...
Description 32M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY

File Size 395.42K  /  66 Page

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    NGTB30N65IHL2WG

ON Semiconductor
Part No. NGTB30N65IHL2WG
OCR Text 0 1 publication order number: ngtb30n65ihl2w/d ngtb30n65ihl2wg igbt this insulated gate bipolar transistor (igbt) features a robust and co...000001 0.00001 0.0001 0.001 0.01 0.1 1 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 figure...
Description IGBT

File Size 88.57K  /  7 Page

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    ONSEMI[ON Semiconductor]
Part No. MMBT2131T3 MMBT2131T1 ON2108
OCR Text ... PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 - 55 to +150 Unit V V V mA mA mW mW C/W mW mW C/W C MMBT2131T1 MMBT2131...000001 0.00001 0.0001 0.001 0.01 0.1 IB, BASE CURRENT (A) 10 mA 0.1 A 0.1 0.1 A 0.05 IC = 1.0 mA ...
Description GENERAL PURPOSE TRANSISTORS
From old datasheet system
PNP Bipolar Junction Transistor

File Size 112.36K  /  4 Page

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    Shenzhen Taychipst Electronic Co., Ltd
Part No. MBRA320T3G
OCR Text ...ated v r , t l = 100 c) i o 3.0 a non-repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz)...000001 0.01 1 10 100 1000 r (t) , transient thermal resistance ( c/w) 0.01 1 10 1000 d = 0.5 0.2 0....
Description Surface Mount Schottky Power Rectifier

File Size 6,117.58K  /  3 Page

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    AON6428

Alpha & Omega Semiconductors
Part No. AON6428
OCR Text ...5 repetitive avalanche energy l=0.05mh c w power dissipation a p dsm w t a =70c 30 1.3 t a =25c maximum junction-to-case c/w c/w maximum j...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure12:si...
Description 30V N-Channel MOSFET

File Size 298.32K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON6428
OCR Text ...5 repetitive avalanche energy l=0.05mh c w power dissipation a p dsm w t a =70c 30 1.3 t a =25c maximum junction-to-case c/w c/w maximum j...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure12:si...
Description 30V N-Channel MOSFET

File Size 379.30K  /  6 Page

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