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  -20v Datasheet PDF File

For -20v Found Datasheets File :: 43293    Search Time::0.875ms    
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    AP0904GMT-HF

Advanced Power Electronics Corp.
Part No. AP0904GMT-HF
OCR Text ...gss gate-source leakage v gs =+ 20v - - + 100 na q g total gate charge 2 i d =20a - 9 14.4 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =20v - 6.5 - ns...
Description Simple Drive Requirement, SO-8 Compatible with Heatsink

File Size 91.19K  /  4 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... in Networking Systems VDSS 20V RDS(on) max 4.4m:@VGS = 10V A A D D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S G 6 5...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ... 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20v ID = 75A VDS = 44V VGS = 10V VDD = 28V ID = 75A RG = 2.6 VGS = 10V e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS ...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ..., VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20v 220 ID = 82A 47 nC VDS = 60V 76 VGS = 10VT --- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ..., VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20v 220 ID = 82A 47 nC VDS = 60V 76 VGS = 10VT --- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    AP0904GMT-HF14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP0904GMT-HF14
OCR Text ...gss gate-source leakage v gs =+ 20v - - + 100 na q g total gate charge 2 i d =20a - 9 14.4 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =20v - 6.5 - ns...
Description AP0904GMT-HF_14
Simple Drive Requirement SO-8 Compatible with Heatsink Low On-resistance

File Size 91.91K  /  4 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20v 180 ID = -38A 32 nC VDS = -44V 86 VGS = -10V, See Fig. 6 and 13 --- VDD = -28V --- ID = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, nH --- and center of die contact ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20v 180 ID = -38A 32 nC VDS = -44V 86 V GS = -10V, See Fig. 6 and 13 --- VDD = -28V --- I D = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from pac...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    AP0904GJ-HF AP0904GH-HF AP0904GJ-HF14 AP0904GH-HF14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP0904GJ-HF AP0904GH-HF AP0904GJ-HF14 AP0904GH-HF14
OCR Text ...gss gate-source leakage v gs =+ 20v - - + 100 na q g total gate charge 2 i d =20a - 9 14.4 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =20v - 6.5 - ns...
Description Low On-resistance, Simple Drive Requirement

File Size 103.93K  /  4 Page

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    Panasonic Battery Group
Part No. UF752836F
OCR Text ... charge: cc - cv 1c (max) 4.20v, 17ma cut - off at 20 c discharge: cc 1c, 2.75v cut - off at 20 c charge: cc - cv 1c (max) 4.20v, 17ma cut - off at 20 c charge: cc - cv 1c (max) 4.20v, 17ma cut - off at 20 c discharge...
Description Lithium Ion

File Size 503.91K  /  1 Page

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For -20v Found Datasheets File :: 43293    Search Time::0.875ms    
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