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  w pd Datasheet PDF File

For w pd Found Datasheets File :: 82842    Search Time::2.25ms    
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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...nd Storage Temperature Range w w/C V mJ A mJ C h g 730 940 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbfyi...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ... (1.6mm from case ) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB M...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...pd (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1....
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    SGS Thomson Microelectronics
Part No. 74ACT163TTR
OCR Text ...(min.), v il = 0.8v (max.) n 50 w transmission line driving capability n symmetrical output impedance: |i oh |=i ol = 24ma (min) n balanced ...pd is defined as the value of the ic's internal equivqlent capacitance which is calculated from the ...
Description SYNCHRONOUS PRESETTABLE 4-BIT COUNTER

File Size 106.71K  /  13 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 0.75 40 Units C/w 8/25/97 IRF4905S/L Ele...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    AOP601L AOP601

Alpha & Omega Semicondu...
AOSMD[Alpha & Omega Semiconductors]
Part No. AOP601L AOP601
OCR Text ... 7.5 6 30 2.5 1.6 -55 to 150 w C Units V A Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current...pd Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 100 1000 10 Pulse width (s) F...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 142.51K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 1.4 40 Units C/w 4/1/99 IRF5305S/L El...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRL3803VL IRL3803VS

International Rectifier
Part No. IRL3803VL IRL3803VS
OCR Text ... (1.6mm from case ) Units A w w w/C V A mJ V/ns Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted, steady state) Typ. --- --- Max. 0.74 40 Units C/w www.irf.com 1 07/21/03 ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 218.88K  /  10 Page

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    IRL3705NLPBF IRL3705NSPBF

IRF
International Rectifier
Part No. IRL3705NLPBF IRL3705NSPBF
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. 0.90 40 Units C/w 06/08/04 IRL3705NS/LPbF Elec...
Description HEXFET Power MOSFET

File Size 291.85K  /  10 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 1.9 40 Units C/w www.irf.com 1 5/13/98 ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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