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  w adc Datasheet PDF File

For w adc Found Datasheets File :: 14517    Search Time::2.875ms    
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    MW7IC2220NBR1 MW7IC2220GNR1 MW7IC2220NR1

Freescale Semiconductor, Inc
Part No. Mw7IC2220NBR1 Mw7IC2220GNR1 Mw7IC2220NR1
OCR Text ...DMA. * Typical Single - Carrier w - CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 watts Avg., Full Frequency Band,...adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 80 madc) Fixture Gate Quiescent Voltage (VDD = 28 ...
Description RF LDMOS wideband Integrated Power Amplifiers

File Size 1,069.31K  /  27 Page

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    TDA10046HT

NXP Semiconductors
Part No. TDA10046HT
OCR Text ...e-chip DVB-T channel decoder w w w. s e m i c o n d u c t o r s . p h i l i p s . c o m 1st or 2nd IF RF AGC (optional) IF AGC Tuner Quiet I2C 10-BIT adc DUAL AGC I2 C IQ CONVERSION & ACI FILTERING FFT DEMODULATOR TIME/FRE...
Description Single-chip DVB-T channel

File Size 322.38K  /  3 Page

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    MRF8S9170NR310

Freescale Semiconductor, Inc
Part No. MRF8S9170NR310
OCR Text ...mats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1000 ma, p out = 50 watts avg., iq magnitude clipping, channel ban...adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source l...
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 455.97K  /  13 Page

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    MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3

Freescale Semiconductor, Inc
Part No. MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3
OCR Text ...mats. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1700 ma, p out = 75 watts avg., iq magnitude clipping, channel ba...adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source ...
Description RF Power Field Effect Transistors

File Size 391.04K  /  14 Page

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    MRF19045LR3 MRF19045LR306 MRF19045LSR3

Freescale Semiconductor, Inc
Part No. MRF19045LR3 MRF19045LR306 MRF19045LSR3
OCR Text ...RF19045LSR3 1930- 1990 MHz, 45 w, 26 V LATERAL N - CHANNEL RF POwER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF19045LR3 CASE 465F - ...adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS =...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 389.69K  /  12 Page

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    Motorola
Part No. MRF18060B
OCR Text ... Inch Reel. 1.90 - 1.99 GHz, 60 w, 26 V LATERAL N-CHANNEL RF POwER MOSFETs CASE 465-06, STYLE 1 (NI-780) (MRF18060B) CASE 465A-06, STY...adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = ...
Description MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 w, 26 V Lateral N-Channel RF Power MOSFETs

File Size 193.88K  /  8 Page

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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text ... Unit Vdc Vdc Vdc adc Apk watts w/C C ms C/w C Designer'sTM is a trademark of Motorola, Inc. REV 1 (c) Motorola IGBT Device Motorola, Inc. 1998 Data 1 MGP7N60ED ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise...
Description Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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    MGP7N60E

MOTOROLA[Motorola, Inc]
Part No. MGP7N60E
OCR Text ... Unit Vdc Vdc Vdc adc Apk watts w/C C ms C/w C Designer's is a trademark of Motorola, Inc. (c) Motorola IGBT Device Motorola, Inc. 1997 Data 1 MGP7N60E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Charac...
Description Insulated Gate Bipolar Transistor

File Size 118.28K  /  6 Page

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