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  u-mo u-mos Datasheet PDF File

For u-mo u-mos Found Datasheets File :: 191    Search Time::7.015ms    
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    HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3

Intersil Corporation
Intersil, Corp.
Part No. HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3
OCR Text ...F) tf Qg(TOT) Qgs Qgd CISS COSS(U) COSS(L) CRSS RJC RJA VDS = 25V, VGS = 0V, f = 1MHz VDS = 50V, VGS = 10V, ID = 10A See Figures 16 and 17 TEST CONDITIONS VDD = 30V, RL = 3 ID = 10A, VGS = 10V, RG = 50 See Figure 14 MIN TYP 4 5 12 6 10.5 1....
Description 60V/ 10A Half Bridge Power MOSFET Array
60V, 10A Half Bridge Power MOSFET Array
20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

File Size 58.60K  /  8 Page

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    TPCP8404

Toshiba Semiconductor
Part No. TPCP8404
OCR Text u-mo /u-mos ) tpcp8404 portable equipment applications motor drive applications ? low drain-source on-resistance : p channel r ds (on) = 38 m ? (typ.) (vgs= ? 10v) n channel r ds (on) = 38 m ? (typ.) vgs=10v) ? high f...
Description TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (u-mo/u-moS)

File Size 281.55K  /  11 Page

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    New Jersey Semi-Conductor P...
Part No. MRF284S
OCR Text u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 advance information the rf sub-micron mosfet line rf power field effect t...mo irl gp5 1 imd "rl gps 1 v 9 30 9 9 9 8.5 35 10.5 33 -33 24 10.7 33 -33 15 10.7 " -29 db % dbc db ...
Description RF Power Field Effect Transistors

File Size 104.73K  /  2 Page

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    New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
Part No. RFL1N08L RFL1N18L RFL1N20L RFP2N18L RFP2N20L
OCR Text u na, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfl1n18l, rfl1n20l, rfp...mo) .... vocb 180 200 gate-source voltage v0? ? drain current, rms continuous i0 1 1 pulsed lou powe...
Description N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

File Size 88.27K  /  2 Page

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    SGS Thomson Microelectronics
Part No. AN281
OCR Text ...n - thaliand - united kingdom - u.s.a. application note 9/9
Description DRIVING DC MOTORS

File Size 89.78K  /  9 Page

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    TPC8016-H

Toshiba Corporation
Toshiba Semiconductor
Part No. TPC8016-H
OCR Text u-moS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications * * * * *...mO (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 A (ma...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed u-moS III)

File Size 76.69K  /  7 Page

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    TPD1030F-13

Toshiba Semiconductor
Part No. TPD1030F-13
OCR Text ...the rohs is directive 2011/65/e u of the european parliament and of the council of 8 june 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. start of commercial production 1999-...
Description 2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive

File Size 161.37K  /  6 Page

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    New Jersey Semi-Conduct...
Part No. 2N6904
OCR Text u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2n6904 n-channel logic level power mos field-effect transistors (l2 fet) ...mo), voor 20 v ' gate-source voltage, va? 10 v ' dain current, rms continuous, id 8 a pulsed, low .'...
Description N-Channel Logic Level Power MOS Field-Effect Transistors

File Size 85.61K  /  2 Page

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For u-mo u-mos Found Datasheets File :: 191    Search Time::7.015ms    
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